Motorola MPS5179RLRA, MPS5179RLRP, MPS5179 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
12 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Emitter–Base Voltage V
EBO
2.5 Vdc
Collector Current — Continuous I
C
50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
200
1.14
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
300
1.71
mW
mW/°C
Storage Temperature Range T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
V
CEO(sus)
12 — Vdc
Collector–Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0)
V
(BR)CBO
20 — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
V
(BR)EBO
2.5 — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
I
CBO
—
—
0.02
1.0
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
h
FE
25 250 —
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
CE(sat)
— 0.4 Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
BE(sat)
— 1.0 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS5179/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS5179
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
f
T
900 2000 MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
C
cb
— 1.0 pF
Small Signal Current Gain
(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)
h
fe
25 300 —
Collector Base Time Constant
(IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz)
rb′C
c
3.0 14 ps
Noise Figure (See Figure 1)
(IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz)
NF — 5.0 dB
Common–Emitter Amplifier Power Gain (See Figure 1)
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
G
pe
15 — dB
1. fT is defined as the frequency at which |hfe| extrapolates to unity.
DC
COMMON
TYPE
1N3195
TYPE
1N3195
1200
91
FROM 50
Ω
SOURCE
1.0 – 5.0
L3
EXTERNAL
SHIELD
L2
2.0 – 10
C7
TO 50
Ω
LOAD
2.0 – 10
C6
0.1
µ
F
0.001
µ
F
RFC
1.0
µ
H
0.1
µ
F
1200
+V
CC
10 k
1200
–V
EE
C
in
3.0 – 35C22.0 – 10
L1
0.02
µ
F
Figure 1. 200 MHz Amplifier Power Gain
and Noise Figure Circuit
L1 1–3/4 Turns, #18 AWG, 0.5″ L, 0.5″ Diameter
L2 2 Turns, #16 AWG, 0.5″ L, 0.5″ Diameter
L3 2 Turns, #13 AWG, 0.25″ L, 0.5″ Diameter (Position 1/4″ from L2)
Q
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