Motorola MPS4250 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–40 Vdc
Collector–Emitter Voltage V
CES
–40 Vdc
Collector–Base Voltage V
CBO
–40 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
— mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –5.0 mA)
V
(BR)CES
–40 — Vdc
Collector–Emitter Sustaining Voltage
(1)
(IC = –5.0)
V
(BR)CEO(sus)
–40 — Vdc
Collector–Base Breakdown Voltage
(IC = –10 mA)
V
(BR)CBO
–40 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mA)
V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current
(VCB = –50 V)
(VCB = –40 V, TA = 65°C)
I
CBO
—
—
–10
–3.0
nA
m
A
Emitter Cutoff Current
(VEB = –3.0 V)
I
EBO
— –20 nA
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
Order this document
by MPS4250/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS4250
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS4250
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
h
FE
250
250
—
—
—
Collector–Emitter Saturation Voltage
(1)
(IC = –10 mA, IB = –0.5 mA)
V
CE(sat)
— –0.25 Vdc
Base–Emitter Saturation Voltage
(1)
(IC = –10 mA, IB = –0.5 mA)
V
BE(sat)
— –0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –5.0 V, f = 1.0 MHz)
C
obo
— 6.0 pF
Input Capacitance
(VEB = –0.5 V, f = 1.0 MHz)
C
ibo
— 16 pF
Small–Signal Current Gain
(IC = –1.0 mA, VCE = –5.0 V, f = 1.0 kHz)
(IC = –0.5 mA, VCE = –5.0 V, f = 20 MHz)
h
fe
250
2.0
800
—
—
Noise Figure
(IC = –20 mA, VCE = –5.0 V, RS = 10 kΩ, f = 1.0 kHz, PBW = 150 Hz)
(IC = –250 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz, PBW = 150 Hz)
NF
—
—
2.0
2.0
dB
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
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