MOTOROLA MPS4126, MPS4126RLRA Datasheet
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IC = 0, IE = –10 mA)
Collector Cutoff Current
(VCB = –20 V, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
= 25°C unless otherwise noted)
A
P
P
TJ, T
R
R
q
q
2
BASE
CE
CB
EB
C
D
D
–55 to +150 °C
stg
JA
JC
COLLECTOR
3
1
EMITTER
–25 Vdc
–25 Vdc
–4.0 Vdc
–200 mAdc
625
5.0
1.5
12
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
Order this document
by MPS4126/D
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
–25 —
–25 —
–4.0 —
— –50
— –50
Vdc
Vdc
Vdc
nAdc
nAdc
(Replaces MPS4125/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MPS4126
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mA, VCE = –1.0 V)
(IC = –50 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –50 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage
(IC = –50 mA, IB = –5.0 mA)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –20 V, f = 100 MHz)
Output Capacitance
(VCB = –5.0 V, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 V, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = –2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
Noise Figure
(IC = –100 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz)
h
FE
V
CE(sat)
V
BE(sat)
f
C
C
h
NF
T
ob
fe
120
60
— –0.4
— –0.95
170 —
— 4.5
ib
— 11.5
120 480
— 4.0
360
—
—
Vdc
Vdc
MHz
pF
pF
—
dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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