Motorola MPS404A Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–35 Vdc
Collector–Base Voltage V
CBO
–40 Vdc
Emitter–Base Voltage V
EBO
–25 Vdc
Collector Current — Continuous I
C
–150 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
(1)
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(2)
(IC = –10 mAdc, IB = 0)
V
(BR)CEO
–35 — Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V
(BR)CBO
–40 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V
(BR)EBO
–25 — Vdc
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
I
CBO
— –100 nAdc
Emitter Cutoff Current
(VBE = –10 Vdc, IC = 0)
I
EBO
— –100 nAdc
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS404A/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS404A
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –12 mAdc, VCE = –0.15 Vdc)
h
FE
30 400 —
Collector–Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
V
CE(sat)
—
—
–0.15
–0.2
Vdc
Base–Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
V
BE(sat)
—
—
–0.85
–1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Common–Base Cutoff Frequency
(IC = –1.0 mAdc, VCB = 6.0 Vdc)
f
ob
4.0 — MHz
Output Capacitance
(VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 20 pF
V
CE
, COLLECTOR–EMITTER VOLTAGE (mV)
V
EC
, EMITTER–COLLECTOR VOLTAGE (mV)
V
BC
, BASE–COLLECTOR VOLTAGE (VOLTS)
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
–100
–80
–60
–40
–20
0
–100
–0.9
–0.82
–0.74
–0.66
–0.58
–0.50
IC, COLLECTOR CURRENT (mA)
IE, EMITTER CURRENT (mA)
Figure 1. Collector–Emitter Voltage
IC, COLLECTOR CURRENT (mA)
IE, EMITTER CURRENT (mA)
Figure 2. Base “On” Voltage
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
NORMAL MODE
INVERTED MODE
TJ = 25°C
V
CE(sat)
@ IC/IB = 10
V
EC(sat)
@ IE/IB = 2.0
IC/IB = 2.0
–100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
NORMAL MODE
INVERTED MODE
TJ = 25°C
V
BE(sat)
@ IC/IB = 2
V
BC(sat)
@ IE/IB = 2
V
BE(on)
@ VCE = –1.0 V
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