Motorola MPS3904 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

40 Vdc

Collector–Base Voltage V

CBO

60 Vdc

Emitter–Base Voltage V

EBO

6.0 Vdc

Collector Current — Continuous I

C

100 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Power Dissipation @ TA = 60°C P

D

450 mW

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction to Case R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = 1.0 mAdc, IB = 0)

V

(BR)CEO

40 — Vdc

Collector–Base Breakdown Voltage

(IC = 10 µAdc, IE = 0)

V

(BR)CBO

60 — Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V

(BR)EBO

6.0 — Vdc

Collector Cutoff Current

(VCE = 30 Vdc, V

EB(off)

= 3.0 Vdc)

I

CEX

— 50 nAdc

Base Cutoff Current

(VCE = 30 Vdc, V

EB(off)

= 3.0 Vdc)

I

BL

— 50 nAdc

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

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SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3



 Motorola, Inc. 1996

COLLECTOR

3

2

BASE

1

EMITTER

MPS3904

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

(1)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)

h

FE

40
70

100

60
30

—
—

300

—
—

—

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

V

CE(sat)

—
—

0.2

0.3

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

V

BE(sat)

0.65
—

0.85

1.1

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

f

T

200 — MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— 4.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

C

ibo

— 8.0 pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

h

ie

1.0 10 kΩ

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

h

re

0.5 8.0 X 10

–4

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

h

fe

100 400 —

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

h

oe

1.0 40 µmhos

Noise Figure

(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

NF — 5.0 dB

SWITCHING CHARACTERISTICS

Delay Time

CC

= 3.0 Vdc, V

BE(off)

= –0.5 Vdc,

t

d

— 35 ns

Rise Time

(VCC = 3.0 Vdc, V

BE(off)

= –0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

t

r

— 50 ns

Storage Time

CC

= 3.0 Vdc, IC = 10 mAdc,

t

s

— 900 ns

Fall Time

(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)

t

f

— 90 ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Turn–On Time Figure 2. Turn–Off Time

EQUIVALENT SWITCHING TIME TEST CIRCUITS

*Total shunt capacitance of test jig and connectors

10 k

+3.0 V

275

CS < 4.0 pF*

10 k

+3.0 V

275

CS < 4.0 pF*

1N916

300 ns

DUTY CYCLE = 2%

+10.9 V

–0.5 V

<1.0 ns

10 < t1 < 500 µs

DUTY CYCLE = 2%

+10.9 V

0

–9.1 V

<1.0 ns

t

1

(V

(V

MPS3904

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 3. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

20

3.0

Figure 4. Noise Current

f, FREQUENCY (Hz)

2.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k

100

50
20

10

5.0

2.0

1.0

0.5

0.2

0.1

BANDWIDTH = 1.0 Hz

RS = 0

IC = 1.0 mA

100 µA

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 µA

BANDWIDTH = 1.0 Hz

RS

≈ ∞

10 µA

300 µA

IC = 1.0 mA

300 µA

100 µA

30 µA

10 µA

10 20 50 100 200 500 1 k 2 k 5 k 10 k

NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 5. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (µA)

500 k

Figure 6. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (µA)

10

2.0 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 7. Wideband

IC, COLLECTOR CURRENT (µA)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is defined as:

NF+20 log

10

ǒ

e

n

2

)

4KTRS)

I

n

2

R

S

2

4KTR

S

Ǔ

1ń2

= Noise Voltage of the T ransistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10

–23

j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)

e

n

I

n

K
T
R

S

3.0 dB

4.0 dB

6.0 dB

10 dB

50

100

200

500

1 k

10 k

5 k

20 k

50 k

100 k

200 k

2 k

20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k

500 k

100

200

500

1 k

10 k

5 k

20 k

50 k

100 k

200 k

2 k

1 M

500 k

50

100

200

500

1 k

10 k

5 k

20 k

50 k

100 k

200 k

2 k

20 30 50 70 100 200 300 500 700 1 k

BANDWIDTH = 1.0 Hz

1.0 dB

2.0 dB

3.0 dB

5.0 dB

8.0 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

8.0 dB