Motorola MPS3646 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 

NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

15 Vdc

Collector–Emitter Voltage V

CES

40 Vdc

Collector–Base Voltage V

CBO

40 Vdc

Emitter–Base Voltage V

EBO

5.0 Vdc

Collector Current— Continuous

— 10 ms Pulse

I

C

300
500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 100 mAdc, VBE = 0)

V

(BR)CES

40 — Vdc

Collector–Emitter Sustaining Voltage

(1)

(IC = 10 mAdc, IB = 0)

V

CEO(sus)

15 — Vdc

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V

(BR)CBO

40 — Vdc

Emitter–Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V

(BR)EBO

5.0 — Vdc

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0)
(VCE = 20 Vdc, VBE = 0, TA = 65°C)

I

CES

—
—

0.5

3.0

m

Adc

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPS3646/D

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SEMICONDUCTOR TECHNICAL DATA



Motorola Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

3

2

BASE

1

EMITTER

MPS3646

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

(1)

DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc)

(IC = 100 mAdc, VCE = 0.5 Vdc)
(IC = 300 mA, VCE = 1.0 Vdc)

h

FE

30
25
15

120

—
—

—

Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mAdc)
(IC = 30 mA, IB = 3.0 mA, TA = 65°C)

V

CE(sat)

—
—
—
—

0.2

0.28

0.5

0.3

Vdc

Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mA)

V

BE(sat)

0.73
—
—

0.95

1.2

1.7

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)

f

T

350 — MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— 5.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

C

ibo

— 9.0 pF

SWITCHING CHARACTERISTICS

Turn–On Time

t

on

— 18 ns

Delay Time

(VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc)

(Figure 1)

t

d

— 10 ns

Rise Time

(Figure 1)

t

r

— 15 ns

Turn–Off Time

CC

= 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc)

t

off

— 28 ns

Fall Time

(VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc)

(Figure 1)

t

f

— 15 ns

Storage Time

(VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2)

t

s

— 18 ns

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

ICV

CC

A
B
C

mA

10
10

100

V

3
10
10

R

S

Ω

330

0

560
560

R

C

Ω

270
960

96

C

S(max)

pF

4
4

12

V

BE(off)

V

–1.5

—

–2.0

V

1

V

10.55
—

6.35

V

2

V
–4.15
–4.65
–4.65

V

3

V

10.70

6.55

6.55

Figure 1. Switching Time Equivalent Test Circuit

V

CC

R

B

R

C

C

S

V

1

V

3

0 0

V

2

V

EB(off)

<2 ns <2 ns

t

on
t

1

t

off
t

1

PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

(V

Test

Condition