Motorola MPS3640 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–12 Vdc
Collector–Base Voltage V
CBO
–12 Vdc
Emitter–Base Voltage V
EBO
–4.0 Vdc
Collector Current — Continuous I
C
–80 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
V
(BR)CES
–12 — Vdc
Collector–Emitter Sustaining Voltage
(1)
(IC = –10 mAdc, IB = 0)
V
CEO(sus)
–12 — Vdc
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V
(BR)CBO
–12 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V
(BR)EBO
–4.0 — Vdc
Collector Cutoff Current
(VCE = –6.0 Vdc, VBE = 0)
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)
I
CES
—
—
–0.01
–1.0
µAdc
Base Current
(VCE = –6.0 Vdc, VEB = 0)
I
B
— –10 nAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Order this document
by MPS3640/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS3640
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = –10 mAdc, VCE = –0.3 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
h
FE
30
20
120
—
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C)
V
CE(sat)
—
—
—
–0.2
–0.6
–0.25
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
V
BE(sat)
–0.75
–0.75
—
–0.95
–1.0
–1.5
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
f
T
500 — MHz
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 3.5 pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— 3.5 pF
SWITCHING CHARACTERISTICS
Delay Time
t
d
— 10 ns
Rise Time
IB1 = –5.0 mAdc)
t
r
— 30 ns
Storage Time
t
s
— 20 ns
Fall Time t
f
— 12 ns
Turn–On Time
(VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc)
t
on
—
—
25
60
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc)
t
off
—
—
35
75
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
VBB = +1.9 V VCC = –6.0 V
0
–6.8 V
V
in
51
0.1
µ
F
1.0 k
110
V
out
680
PULSE SOURCE
RISE TIME
≤
1.0 ns
PULSE WIDTH
≥
100 ns
Zin = 50 OHMS
FALL TIME
≤
1.0 ns
TO SAMPLING SCOPE
INPUT Z
≥
100 k
RISE TIME
≤
1.0 ns
NOTES: Collector Current = 50 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA.
VBB = –6.0 V VCC = 1.5 V
0
5.0 V
V
in
51
0.1
µ
F
5.0 k
130
V
out
5.0 k
PULSE SOURCE
RISE TIME
≤
1.0 ns
PULSE WIDTH
≥
200 ns
Zin = 50 OHMS
FALL TIME
≤
1.0 ns
TO SAMPLING SCOPE
INPUT Z
≥
100 k
RISE TIME
≤
1.0 ns
Figure 1. Figure 2.
NOTES: Collector Current = 10 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 0.5 mA.
(VCC = –6.0 Vdc, IC = –50 mAdc, V
(VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc)
BE(off)
= –1.9 Vdc,
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