Motorola MPS3638A, MPS3638 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–25 Vdc
Collector–Emitter Voltage V
CES
–25 Vdc
Collector–Base Voltage V
CBO
–25 Vdc
Emitter–Base Voltage V
EBO
–4.0 Vdc
Collector Current — Continuous I
C
–500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
(1)
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 mAdc, VBE = 0)
V
(BR)CES
–25 — Vdc
Collector–Emitter Sustaining Voltage
(2)
(IC = –10 mAdc, IB = 0)
V
CEO(sus)
–25 — Vdc
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V
(BR)CBO
–25 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V
(BR)EBO
–4.0 — Vdc
Collector Cutoff Current
(VCE = –15 Vdc, VBE = 0)
(VCE = –15 Vdc, VBE = 0, TA = –65°C)
I
CES
—
—
–0.035
–2.0
m
Adc
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
I
EBO
— –35 nA
Base Current
(VCE = –15 Vdc, VBE = 0)
I
B
— –0.035
m
Adc
1. R
q
JA
is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Order this document
by MPS3638/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS3638,A
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(2)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc) MPS3638A
(IC = –10 mAdc, VCE = –10 Vdc) MPS3638
MPS3638A
(IC = –50 mAdc, VCE = –1.0 Vdc) MPS3638
MPS3638A
(IC = –300 mAdc, VCE = –2.0 Vdc) MPS3638
MPS3638A
h
FE
80
20
100
30
100
20
20
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –50 mAdc, IB = –2.5 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
V
CE(sat)
—
—
–0.25
–1.0
Vdc
Base–Emitter Saturation Voltage
(IC = –50 mAdc, IB = –2.5 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
V
BE(sat)
—
–0.80
–1.1
–2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz) MPS3638
MPS3638A
f
T
100
150
—
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) MPS3638
MPS3638A
C
obo
—
—
20
10
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) MPS3638
MPS3638A
C
ibo
—
—
65
25
pF
Input Impedance
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
h
ie
— 2000 kΩ
Voltage Feedback Ratio
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) MPS3638
MPS3638A
h
re
—
—
26
15
X 10
–4
Small–Signal Current Gain
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) MPS3638
MPS3638A
h
fe
25
100
—
—
—
Output Admittance
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
h
oe
— 1.2 mmhos
SWITCHING CHARACTERISTICS
Delay Time
t
d
— 20 ns
Rise Time
(VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc)
t
r
— 70 ns
Storage Time
CC
= –10 Vdc, IC = –300 mAdc,
t
s
— 140 ns
Fall Time
(VCC = –10 Vdc, IC = –300 mAdc,
IB1 = –30 mAdc, IB2 = –30 mAdc)
t
f
— 70 ns
Turn–On Time (IC = –300 mAdc, IB1 = –30 mAdc) t
on
— 75 ns
Turn–Off Time (IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc) t
off
— 170 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
(V
MPS3638,A
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
–16 V
10 to 100 µs,
DUTY CYCLE = 2%
0
1.0 k
Ω
–30 V
200
Ω
CS* < 10 pF
1.0 k
Ω
–30 V
200
Ω
CS* < 10 pF
+4.0 V
< 2 ns
1.0 to 100 µs,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
–16 V
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10
20
2.0
30
CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100
200
0.1
300
500
0.7
0.5
VCC = 30 V
IC/IB = 10
C
eb
Q
T
Q
A
25
°
C 100°C
TRANSIENT CHARACTERISTICS
3.01.00.50.30.2
0.3
0.2
30
C
cb
0.7 7.0
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