Motorola MMQA18VT1, MMQA13VT1, MMQA13VT3, MMQA15VT1, MMQA12VT1 Datasheet
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MOTOROLA
MMQA Series
Transient Voltage Suppressor
for ESD Protection
This quad monolithic silicon voltage suppressor is designed for applications
requiring transient overvoltage protection capability. It is intended for use in
voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines
using only one package. These devices are ideal for situations where board
space is at a premium.
Specification Features:
• SC-59 Package Allows Four Separate Unidirectional Configurations
• Peak Power — Min. 24 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform
• Peak Power — Min. 150 W @ 20 ms (Unidirectional), per Figure 6 Waveform
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 2.0 µA
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
• Void Free, Transfer-Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (1) @ TA ≤ 25°C P
pk
24 Watts
Peak Power Dissipation @ 20 ms (2) @ TA ≤ 25°C
P
pk
150 Watts
Total Power Dissipation on FR-5 Board (3) @ TA = 25°C °PD° °225
1.8
°mW°
mW/°C
Thermal Resistance from Junction to Ambient R
θJA
556 °C/W
Total Power Dissipation on Alumina Substrate (4) @ TA = 25°C
Derate above 25°C
°PD° °300
2.4
°mW
mW/°C
Thermal Resistance from Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature Range TJ, T
stg
°– 55 to +150° °C
Lead Solder Temperature — Maximum (10 Second Duration) T
L
260 °C
1. Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 4.
2. Non-repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 4.
3. FR-5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMQA/D
Motorola, Inc. 1996
SC-59 QUAD
TRANSIENT VOLTAGE
SUPPRESSOR
24 WATTS PEAK POWER
5.6 – 33 VOLTS
CASE 318F-01
STYLE 1
SC-59 PLASTIC
Motorola Preferred Devices
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
1
2
3
4
5
6
1
2
3
6
5
4
MOTOROLA
2
MMQA Series
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V
F
= 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener
Max Reverse
Max Reverse
Voltage @
Maximum
Temperature
VZT (5)
(V)
@ I
ZT
I
R
V
R
I
mpedance
(7)
S
urge
Current
I
RSM
(6)
(Clamping
Voltage)
p
Coefficient of
V
Z
Device Min Nom Max (mA) (nA) (V)
ZZT @ IZT
(Ω) (mA)
I
RSM(4)
(A)
V
RSM
(V)
(mV/°C)
MMQA5V6T1,T3 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26
MMQA6V2T1,T3 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6
MMQA6V8T1,T3 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9
MMQA12VT1,T3 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14
MMQA13VT1,T3 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15
MMQA15VT1,T3 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16
MMQA18VT1,T3 17.1 18 18.9 1.0 75 14 80 0.923 26 19
MMQA20VT1,T3 19 20 21 1.0 75 15 80 0.84 28.6 20.1
MMQA21VT1,T3 20 21 22.1 1.0 75 16 80 0.792 30.3 21
MMQA22VT1,T3 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22
MMQA24VT1,T3 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25
MMQA27VT1,T3 25.7 27 28.4 1.0 75 21 125 0.615 39 28
MMQA30VT1,T3 28.5 30 31.5 1.0 75 23 150 0.554 43.3 32
MMQA33VT1,T3 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37
(5) VZ measured at pulse test current IT at an ambient temperature of 25°C.
(6) Surge current waveform per Figure 5 and derate per Figure 4.
(7) ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I
Z(AC)
= 0.1 I
Z(DC)
, with AC frequency = 1 kHz.
NOTE: SPECS LISTED ABOVE ARE PRELIMINARY
TYPICAL CHARACTERISTICS
300
VZ, NOMINAL ZENER VOLTAGE (V)
C, CAPACITANCE (pF)
250
200
150
100
50
0
5.6 6.8 12 20 27
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF VZ NOM
Figure 1. Typical Capacitance
5.6 6.8 20 27
10,000
1,000
100
10
0
Figure 2. Typical Leakage Current
I
R
, LEAKAGE (nA)
VZ, NOMINAL ZENER VOLTAGE (V)
33
33
+150°C
+25°C
–40°C
3
MOTOROLA
MMQA Series
TYPICAL CHARACTERISTICS
Figure 3. Steady State Power Derating Curve
Figure 4. Pulse Derating Curve
Figure 5. 10 × 1000 ms Pulse Waveform
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
P
D
, POWER DISSIPATION (mW)
TA, AMBIENT TEMPERATURE (°C)
FR-5 BOARD
ALUMINA SUBSTRATE
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (
°
C)
PEAK PULSE DERA TING IN % OF PEAK POWER
OR CURRENT @ T
A
= 25
C
°
VALUE (%)
100
50
0
01234
t, TIME (ms)
t
r
t
P
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF I
RSM
.
tr
≤
10 µs
HALF VALUE—
I
RSM
2
PEAK VALUE—I
RSM
Figure 6. 8 × 20 ms Pulse Waveform
Figure 7. Maximum Non–Repetitive Surge
Power, Ppk versus PW
Figure 8. Typical Maximum Non–Repetitive
Surge Power, Ppk versus V
BR
Ppk PEAK SURGE POWER (W)
0.1 1.0 10 100 1000
1.0
10
100
Power is defined as V
RSM
x IZ(pk) where V
RSM
is the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
°
C
100
90
80
70
60
50
40
30
20
10
0
020406080
t, TIME (
m
s)
% OF PEAK PULSE CURRENT
200
180
160
140
120
100
80
60
40
20
0
5.6 6.8 12 20 33
NOMINAL V
Z
P
t
P
t
r
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
m
s
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
27
, PEAK SURGE POWER (W)
PK
8 × 20 WAVEFORM AS PER FIGURE 6
10 × 100 WAVEFORM AS PER FIGURE 5
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