Motorola MMGA20VT1, MMGA5V6T1 Datasheet

1

MOTOROLA

MMQA5V6T1 MMQA20VT1

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Transient Voltage Suppressor
for ESD Protection

This quad monolithic silicon voltage suppressor is designed for applications
requiring transient overvoltage protection capability. It is intended for use in
voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment, and other applica­tions. Its quad junction common anode design protects four separate lines
using only one package. These devices are ideal for situations where board
space is at a premium.

Specification Features:

• SC-59 Package Allows Four Separate Unidirectional Configurations

• Peak Power — 24 Watts @ 1.0 ms (Unidirectional), per Figure 7 Waveform

• Maximum Clamping Voltage @ Peak Pulse Current

• Low Leakage < 2.0 µA

• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model

Mechanical Characteristics:

• Void Free, Transfer-Molded, Thermosetting Plastic Case

• Corrosion Resistant Finish, Easily Solderable

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel. Replace

with “T3” in the Device Number to order the 13 inch/10,000 unit reel.

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Value Unit

Peak Power Dissipation @ 1.0 ms (1)

@ TA ≤ 25°C

P

pk

24 Watts

Total Power Dissipation on FR-5 Board (2) @ TA = 25°C

Derate above 25°C

°PD° °225

1.8

°mW°

mW/°C

Thermal Resistance Junction to Ambient R

θJA

556 °C/W

Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C

Derate above 25°C

°PD° °300

2.4

°mW

mW/°C

Thermal Resistance Junction to Ambient R

θJA

417 °C/W

Junction and Storage Temperature Range T

J

T

stg

°– 55 to +150° °C

Lead Solder Temperature — Maximum (10 Second Duration) T

L

260 °C

1. Non-repetitive current pulse per Figure 7 and derate above TA = 25°C per Figure 8.

2. FR-5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

4. Other voltages are available

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMQA5V6T1/D

 Motorola, Inc. 1996

Rev 3

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

SC-59 QUAD

TRANSIENT VOLTAGE

SUPPRESSOR

5.6 VOLTS (4)

24 WATTS PEAK POWER

CASE 318F-01

STYLE 1

SC-59 PLASTIC

4 5
6

Motorola Preferred Devices

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. ANODE

6. CATHODE

1

2

3

1

2

3

4

5

6

MOTOROLA
2

MMQA5V6T1 MMQA20VT1

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V

F

= 0.9 V Max @ IF = 10 mA)

Breakdown Voltage

Max Reverse

Leakage Current

Max Zener Impedance (5)

Max

Reverse

Max Reverse

Voltage @

Maximum

VZT(3)

(V)

@ I

ZT

IR @ VR

ZZT @ IZT

Surge
Current
I

RSM(4)

I

RSM

(4)

(Clamping

Voltage)

Temperature

Coefficient of

V

Z

Min Nom Max

(mA)

1

(µA) (V)

(Ω) (mA)

I

RSM(4)

(A)

V

RSM

(V)

(mV/°C)

5.32 5.6 5.88 1.0 2.0 3.0 400 3.0 8.0 1.26
19 20 21 1.0 0.1 15 125 0.84 28.6 20.07

(3) VZ measured at pulse test current IT at an ambient temperature of 25°C.
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are I

Z(AC)

= 0.1 I

Z(DC)

, with AC frequency = 1 kHz.

Typical Characteristics

– 50 50 100 150

8

7

6

5

4

V ,

Z

BREAKDOWN VOLTAGE (VOLTS)

23

17

TA, AMBIENT TEMPERATURE (

°

C)

Figure 1. Typical Breakdown Voltage

versus Temperature

Figure 2. Typical Breakdown Voltage

versus Temperature

0 2 4 6 8 10 14 16

70
60

50

40

30

20

0

C, CAPACITANCE (pF)

0 – 40 25 150
TA, AMBIENT TEMPERATURE (

°

C)

REVERSE VOLTAGE (V)

VZ @ I

T

MMQA5V6T1

22

21

20

19

18

MMQA20VT1

10000

1000

100

TA, AMBIENT TEMPERATURE (

°

C)

I

R,

REVERSE LEAKAGE CURRENT (nA)

– 50 50 100 1500

Figure 3. Typical Leakage Current

versus Temperature

Figure 4. Typical Capacitance versus

Reverse Voltage

10

12

MMQA20VT1

UNIDIRECTIONAL

V ,

Z

BREAKDOWN VOLTAGE (VOLTS)

0

UNIDIRECTIONAL

3

MOTOROLA

MMQA5V6T1 MMQA20VT1

Typical Characteristics

0 1 1.5 3

300

Figure 5. Typical Capacitance versus

Reverse Voltage

0 25 50 75 100 125 150 175

300

250

200

150

100

50

0

Figure 6. Steady State Power Derating Curve

P

D

, POWER DISSIPATION (mW)

0.5
REVERSE VOLTAGE (V)

TA, AMBIENT TEMPERATURE (

°

C)

FR-5 BOARD

ALUMINA SUBSTRATE

C, CAPACITANCE (pF)

2 2.5

275
250
225
200
175
150
125
100

75
50
25

0

UNIDIRECTIONAL

MMQA5V6T1

VALUE (%)

100

50

0

0 1 2 3 4

t, TIME (ms)

Figure 7. Pulse Waveform

t

r

t

P

100

90
80
70
60
50
40
30
20
10

0

0 25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE (

°

C)

Figure 8. Pulse Derating Curve

PEAK PULSE DERATING IN % OF PEAK POWER

OR CURRENT @ T

A

= 25

C

°

Figure 9. Maximum Non-repetitive Surge

Power, Ppk versus PW

Ppk PEAK SURGE POWER (W)

0.1 1.0 10 100 1000

1.0

10

100

Power is defined as V

RSM

x IZ(pk) where V

RSM

is the clamping voltage at IZ(pk).

PW, PULSE WIDTH (ms)

PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF I

RSM

.

tr

≤

10 µs

HALF VALUE—

I

RSM

2

PEAK VALUE—I

RSM

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25

°

C