Motorola MMFT5P03HDT3 Datasheet
5P03H
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT5P03HD/D
Medium Power Surface Mount Products
MMFT5P03HD is an advanced power MOSFET which utilizes
Motorola’s High Cell Density HDTMOS process. This miniature
surface mount MOSFET features ultra low R
level performance. It is capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MMFT5P03HD devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. T ypical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Ultra Low R
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SOT–223 Surface Mount Package — Saves Board
Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
• Avalanche Energy Specified
Specified at Elevated Temperature
DSS
Provides Higher Efficiency and Extends
DS(on)
DS(on)
and true logic
Motorola Preferred Device
TMOS MEDIUM
POWER FET
5.2 AMPERES
2, 4
D
G
1
S
3
30 VOLTS
R
CASE 318E–04, Style 3
DS(on)
1
2
TO–261AA
= 100 mΩ
4
3
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMFT5P03HDT3 13″ 12 mm embossed tape 4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 2
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MMFT5P03HD
MAXIMUM RATINGS
Negative sign for P–Channel devices omitted for clarity
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Minimum
FR–4 or G–10 PCB
10 seconds
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 W)
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(TJ = 25°C unless otherwise noted)
Rating
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current
(1)
(1)
Symbol Max Unit
30 V
30 V
± 20 V
40
3.13
25
5.2
4.1
26
80
1.56
12.5
3.7
2.9
19
– 55 to 150 °C
250
°C/W
Watts
mW/°C
°C/W
Watts
mW/°C
mJ
A
A
A
A
A
A
R
THJA
I
R
THJA
I
E
DSS
DGR
GS
P
D
I
D
I
D
DM
P
D
I
D
I
D
DM
stg
AS
2
Motorola TMOS Power MOSFET Transistor Device Data
MMFT5P03HD
)
f = 1.0 MHz)
V
10 Vd
G
)( )
V
G
)( )
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
(1)
(1)
Cpk =
(2)
Max limit – Typ
ON CHARACTERISTICS
Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)
(VGS = 10 Vdc, ID = 5.2 Adc)
(VGS = 4.5 Vdc, ID = 2.6 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc) (1) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
(4) Repetitive rating; pulse width limited by maximum junction temperature.
= 25°C unless otherwise noted)
C
(VDS = 25 Vdc, VGS = 0 Vdc,
(VDD = 15 Vdc, ID = 4.0 Adc,
(VDD = 15 Vdc, ID = 2.0 Adc,
(VDS = 24 Vdc, ID = 4.0 Adc,
(IS = 4.0 Adc, VGS = 0 Vdc) (1)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
3 x SIGMA
f = 1.0 MHz
c,
=
GS
RG = 6.0 Ω) (1)
= 4.5 Vdc,
GS
RG = 6.0 Ω) (1)
VGS = 10 Vdc) (1)
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
V
SD
t
rr
t
a
t
b
RR
30
—
—
—
— — 100 nAdc
1.0
—
—
—
2.0 4.0 — Mhos
— 475 950 pF
— 220 440
— 70 140
— 12 24
— 24 48
— 47 94
— 46 92
— 19 38
— 55 110
— 30 60
— 40 80
T
1
2
3
— 17 24
— 1.7 —
— 6.3 —
— 4.6 —
—
—
— 39 —
— 20 —
— 19 —
— 0.042 — µC
—
28
—
—
1.75
3.5
79
119
1.1
0.89
—
—
1.0
25
3.0
—
100
150
1.5
—
Vdc
mV/°C
µAdc
Vdc
mV/°C
mΩ
ns
nC
Vdc
ns
Motorola TMOS Power MOSFET Transistor Device Data
3
MMFT5P03HD
TYPICAL ELECTRICAL CHARACTERISTICS
10
8
6
4
, DRAIN CURRENT (AMPS)
2
D
I
0
0 0.4 0.8 1.61.2 2
VGS = 10 V
8 V
6 V
TJ = 25°C
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS) VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
3.1 V
2.7 V
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
0.3
ID = 4 A
TJ = 25°C
0.2
10
VDS ≥ 10 V
8
6
4
, DRAIN CURRENT (AMPS)
D
I
2
0
232.5 43.5 4.5
0.3
TJ = 25°C
0.2
TJ = 100°C
25°C
–55°C
VGS = 4.5 V
0.1
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
DS(on)
R
2610
48 62
VGS, GATE–T O–SOURCE VOLT AGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–T o–Source Voltage
2
VGS = 10 V
ID = 2 A
1.5
1
(NORMALIZED)
, DRAIN–TO–SOURCE RESIST ANCE
0.5
DS(on)
R
0
– 50 – 25 0 25 50 75 100 125 150 0 6 12 30
0.1
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
DS(on)
R
048
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
VGS = 0 V
100
10
, LEAKAGE (nA)
1
DSS
I
0.1
00.1
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)TJ, JUNCTION TEMPERATURE (°C)
10 V
3751
TJ = 125°C
100°C
25°C
18
24
Figure 5. On–Resistance Variation with
Temperature
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
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