Motorola MMFT3055EL Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

    

N–Channel Enhancement Mode
Silicon Gate TMOS E–FET

t

SOT–223 for Surface Mount

This advanced E–FET is a TMOS power MOSFET designed to
withstand high energy in the avalanche and commutation modes.
This device is also designed with a low threshold voltage so it is
fully enhanced with 5 Volts. This new energy efficient device also
offers a drain–to–source diode with a fast recovery time. Designed
for low voltage, h igh s peed switching applications i n power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications.

• Silicon Gate for Fast Switching Speeds

• Low Drive Requirement to Interface Power Loads to Logic

Level ICs, V

GS(th)

= 2 Volts Max

• Low R

DS(on)

— 0.18 Ω max

• The SOT–223 Package can be Soldered Using Wave or Re-

flow. The Formed Leads Absorb Thermal Stress During Sol­dering, Eliminating the Possibility of Damage to the Die

• Available in 12 mm Tape and Reel

Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.
Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.

MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DS

60

Gate–to–Source Voltage — Continuous V

GS

±15

Vdc

Drain Current — Continuous

Drain Current — Pulsed

I

D

I

DM

1.5
6

Adc

Total Power Dissipation @ TA = 25°C

Derate above 25°C

P

D

(1)

0.8

6.4

Watts

mW/°C

Operating and Storage Temperature Range TJ, T

stg

–65 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 V, VGS = 5 V, Peak IL= 1.5 A, L = 0.2 mH, RG = 25 Ω)

E

AS

178 mJ

DEVICE MARKING

3055L

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient (surface mounted) R

θJA

156 °C/W

Maximum Temperature for Soldering Purposes,

Time in Solder Bath

T

L

260

5

°C

Sec

(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.

TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3

Order this document

by MMFT3055EL/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1995



MEDIUM POWER

LOGIC LEVEL TMOS FET

1.5 AMP

60 VOLTS

R

DS(on)

= 0.18 OHM

Motorola Preferred Device

CASE 318E–04, STYLE 3

TO–261AA



D

S

G

2,4

3

1

1

2

3

4

MMFT3055EL

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA) V

(BR)DSS

60 — — Vdc

Zero Gate Voltage Drain Current, (VDS = 60 V, VGS = 0) I

DSS

— — 10 µAdc

Gate–Body Leakage Current, (VGS = 15 V, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

Gate Threshold Voltage, (VDS = VGS, ID = 1.0 mA) V

GS(th)

1 — 2 Vdc

Static Drain–to–Source On–Resistance, (VGS = 5 V, ID = 0.75 A) R

DS(on)

— — 0.18 Ohms

Drain–to–Source On–Voltage, (VGS = 5 V, ID = 1.5 A) V

DS(on)

— — 0.36 Vdc

Forward Transconductance, (VDS = 15 V, ID = 0.75 A) g

FS

— 2.1 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 500 —

Output Capacitance

(VDS = 25 V,

VGS = 0,

C

oss

— 175 —

Reverse Transfer Capacitance

f = 1 MHz)

C

rss

— 40 —

SWITCHING CHARACTERISTICS

Turn–On Delay Time

t

d(on)

— 20 —

Rise Time

t

r

— 95 —

Turn–Off Delay Time

VGS = 5 V, RG = 50 ohms,

RGS = 25 ohms)

t

d(off)

— 38 —

ns

Fall Time

GS

= 25 ohms)

t

f

— 50 —

Total Gate Charge

Q

g

— 7 15

Gate–Source Charge

(VDS = 48 V, ID = 1.5 A,

VGS = 5 Vdc)

Q

gs

— 1.3 —

Gate–Drain Charge

See Figures 15 and 16

Q

gd

— 6.3 —

SOURCE DRAIN DIODE CHARACTERISTICS

(1)

Forward On–Voltage IS = 1.5 A, VGS = 0 V

SD

— 1.0 — Vdc

Forward Turn–On Time

t

on

Limited by stray inductance

Reverse Recovery Time

dlS/dt = 400 A/µs,

VR = 30 V

t

rr

— 55 —

ns

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%

(VDD= 25 V, ID = 6 A

IS = 1.5 A, VGS =

0,

pF

nC

MMFT3055EL

3

Motorola TMOS Power MOSFET Transistor Device Data

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

Figure 1. On Region Characteristics

D

I , DRAIN CURRENT (AMPS)

0 1.0 2.0 3.0 4.0 5.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C

6.0 V

5.5 V

4.5 V

5.0 V

4.0 V

3.5 V

3.0 V

VGS = 2.5 V

GS(TH)

V , GATE THRESHOLD VOLTAGE

Figure 2. Gate–Threshold Voltage Variation

With Temperature

1.2

1.1

1.0

0.9

0.8

0.7
–50 0 50 100 150

TJ, JUNCTION TEMP (

°

C)

(NORMALIZED)

Figure 3. Transfer Characteristics

D

I , DRAIN CURRENT (AMPS)

0 2.0 4.0 6.0 7.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = –55°C

25

°

C

Figure 4. On–Resistance versus Drain Current

0 1.0 2.0 3.0 4.0

ID, DRAIN CURRENT (AMPS)

Figure 5. On–Resistance versus

Gate–to–Source Voltage

2.0 3.0 4.0 5.0 6.0 7.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C
ID = 1.5 A

8.0

0.1

0.2

0.3

0.4

0.5

0

Figure 6. On–Resistance versus

Junction Temperature

0.4

0.3

0.2

0.1

0

–50 0 50 100 150

TJ, JUNCTION TEMP (

°

C)

VGS = 5 V
ID = 1.5 A

0

0.05

0.10

0.15

0.20

0.25

0.30

TJ = 100

°

C

55

°

C

25

°

C

VDS = 8 V

VGS = 5 V

VDS = V

GS

ID = 1.0 mA

10

8.0

6.0

4.0

2.0

0

10

8.0

6.0

4.0

2.0

0

100°C