Motorola MMFT2N25E Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MMFT2N25E/D
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently .
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor – Absorbs High Energy in the
1
G
Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage, RGS = 1.0 m
Gate–to–Source Voltage — Continuous V
Gate–to–Source Voltage — Single Pulse (tp ≤ 50 mS)
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 mS)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR–4 Bd. Material
Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR–4 Bd. Material
Total PD @ TA = 25°C mounted on min. Drain Pad on FR–4 Bd. Material
Operating and Storage Temperature Range TJ, T
(TC = 25°C unless otherwise noted)
Rating
W
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω)
2,4
D
S
3
Symbol Value Unit
V
V
I
E
DSS
DGR
GS
GSM
I
D
I
D
DM
P
D
stg
AS
TMOS POWER FET
2.0 AMPERES
250 VOL TS
R
1
CASE 318E–04, STYLE 3
250 Vdc
250 Vdc
±20 Vdc
±40 Vdc
2.0
0.6
7.0
0.77
6.2
1.0
1.2
0.8
–55 to 150 °C
26
DS(on)
2
3
TO–261AA
= 3.5
mW/°C
W
4
Adc
Apk
Watts
Watts
mJ
THERMAL CHARACTERISTICS
— Junction–to–Ambient on 1″ Sq. Drain Pad on FR–4 Bd. Material
— Junction–to–Ambient on 0.7″ Sq. Drain Pad on FR–4 Bd. Material
— Junction–to–Ambient on min. Drain Pad on FR–4 Bd. Material
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
R
θJA
L
90
103
162
260 °C
°C/W
1
MMFT2N25E
(V
DS
(V
125 V
D
,
V
V)
I
2.0 A
GS
)
(
S
,
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 250 V, VGS = 0)
(VDS = 250 V, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ±20 V , VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 10 V, ID = 1.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 2.0 A)
(VGS = 10 V, ID = 1.0 A, TJ = 125°C)
Forward Transconductance
(VDS = 8.0 V, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge q
(1) Pulse Test: Pulse Width ≤300 µS, Duty Cycle ≤ 2%.
(1)
(TC = 25°C unless otherwise noted)
V
= 25 V
= 25 V,
VGS = 0,
f = 1.0 MHz)
(1)
=
DS
ID = 2.0 A,
RG = 9.1 Ohms,
GS
(VDS = 200 V,
=
D
VGS = 10 V)
IS = 2.0 A, VGS = 0 V V
IS = 2.0 A, VGS = 0 V, TJ = 125°C V
(IS = 2.0 A,
dlS/dt = 100 A/µs)
,
= 10
,
BV
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Q
DSS
FS
iss
oss
rss
t
r
t
f
T
1
2
3
SD
SD
t
rr
t
a
t
b
rr
250
—
—
—
— — 100
2.0
—
— 2.1 3.5
—
—
0.44 1.2 —
— 137 190
— 30 40
— 7.0 10
— 9.2 20
— 6.6 10
— 13 30
— 8.5 20
— 4.7 10
— 1.3 —
— 3.2 —
— 2.3 —
— 0.94 2.0
— 0.83 —
— 104 —
— 63 —
— 41 —
— 0.365 —
—
324
—
—
2.8
5.7
—
—
—
—
10
100
4.0
—
8.40
7.35
Vdc
V/°C
µAdc
nAdc
Vdc
mV/°C
Ohms
Vdc
mhos
pF
ns
nC
Vdc
nS
m
C
2
Motorola TMOS Power MOSFET Transistor Device Data
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