Motorola MMFT2955E Datasheet

Vdc



SEMICONDUCTOR TECHNICAL DATA

    

P–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount

This advanced E–FET is a TMOS medium power MOSFET
designed to withstand high energy in the avalanche and commuta­tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. The device is housed in the
SOT–223 package which is designed for medium power surface
mount applications.

• Silicon Gate for Fast Switching Speeds

• Low R

• The SOT–223 Package can be Soldered Using Wave or Re-

flow. The Formed Leads Absorb Thermal Stress During Sol­dering, Eliminating the Possibility of Damage to the Die

• Available in 12 mm Tape and Reel

Use MMFT2955ET1 to order the 7 inch/1000 unit reel.
Use MMFT2955ET3 to order the 13 inch/4000 unit reel.

DS(on)

— 0.3 Ω max

t



D

G

S

Order this document

by MMFT2955E/D



Motorola Preferred Device

TMOS MEDIUM POWER FET

1.2 AMP

60 VOLTS

R

CASE 318E–04, STYLE 3

DS(on)

1

2

TO–261AA

= 0.3 OHM

4

3

MAXIMUM RATINGS

Drain–to–Source Voltage V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous

Drain Current — Pulsed

Total Power Dissipation @ TA = 25°C

Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25 Ω)

(TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

DS
GS

I

D

I

DM

(1)

P

D

stg

E

AS

DEVICE MARKING

2955

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient (surface mounted) R
Maximum Temperature for Soldering Purposes,

Time in Solder Bath

(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.

TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company

θJA

T

L

60

±15

1.2

4.8

0.8

6.4

–65 to 150 °C

108 mJ

156 °C/W
260

10

Adc

Watts

mW/°C

°C

Sec

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

1

MMFT2955E

(V

DS

V

R

ns

GS

)

(V

DS

I

D

dlS/dt

400 A/

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA) V
Zero Gate Voltage Drain Current,

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current,

(VGS = 15 V, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage, (VDS = VGS, ID = 1 mA) V
Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.6 A) R
Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1.2 A) V
Forward Transconductance, (VDS = 15 V, ID = 0.6 A) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge

SOURCE DRAIN DIODE CHARACTERISTICS

Forward On–Voltage IS = 1.2 A, VGS = 0 V
Forward Turn–On Time

Reverse Recovery Time

(1) Switching characteristics are independent of operating junction temperature.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤2%.

(TA = 25°C unless otherwise noted)

V

= 20 V

= 20 V,

VGS = 0,

f = 1 MHz)

(1)

(VDD = 25 V, ID = 1.6 A

= 10 V,

GS

RGS = 25 ohms)

V

See Figures 15 and 16

(2)

IS = 1.2 A, VGS = 0,

G

= 48 V I = 1.2 A

= 48 V,

VGS = 10 Vdc)

=

VR = 30 V

= 50 ohms,

= 1.2 A,

µs,

(BR)DSS

I

DSS

I

GSS

GS(th)
DS(on)

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

SD

t

on

t

rr

60 — — Vdc

—
—

— — 100

2.0 — 4.5 Vdc
— — 0.3 Ohms
— — 0.48 Vdc
— 7.5 — mhos

— 460 —
— 210 —
— 84 —

— 18 —
— 29 —
— 44 —
— 32 —
— 18 —
— 2.8 —
— 7.5 —

— 1.0 — Vdc

— 90 —

—
—

Limited by stray inductance

1.0
50

µAdc

nAdc

pF

nC

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

10

D

MMFT2955E

20 V

15 V

8

10 V

TJ = 25°C

8 V

7 V

1.2

1.1

VDS = V

GS

ID = 1 mA

6

4

, DRAIN CURRENT (AMPS)

D

I

2

0

8

6

4

, DRAIN CURRENT (AMPS)

2

D

I

0

6 V

5 V

VGS = 4 V

1086420

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

1

0.9

0.8

, GATE THRESHOLD VOLTS (NORMALIZE

GS(th)

0.7

V

–50

0 50 100 150

°

TJ, JUNCTION TEMPERATURE (

C)

Figure 1. On Region Characteristics Figure 2. Gate–Threshold V oltage Variation

With Temperature

0.6

0.5

0.4

0.3

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)R

0

DS(on)

R

V

= 10 V

GS

100°C

25°C

–55°C

0

2468

ID, DRAIN CURRENT (AMPS)

–55°C

VDS = 10 V

25°C

100°C

–55°C

VGS, GATE–T O–SOURCE VOL TAGE (VOLTS)

–55°C

25°C

100°C

1086420

0.5

0.4

0.3

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

4

R

Figure 3. Transfer Characteristics Figure 4. On–Resistance versus Drain Current

0.5

T

= 25°C

J

ID = 1.2 A

710131619

VGS, GATE–T O–SOURCE VOL TAGE (VOLTS)

Figure 5. On–Resistance versus

Gate–to–Source V oltage

0.4

0.3

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

DS(on)

–50 0 50 100 150

TJ, JUNCTION TEMPERATURE (

Figure 6. On–Resistance versus

Junction T emperature

VGS = 10 V
ID = 1.2 A

°

C)

Motorola TMOS Power MOSFET Transistor Device Data

3