Motorola MMFT2406T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT2406T1/D
Motorola Preferred Device
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, converters, solenoid and relay drivers. The
device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• High Voltage — 240 Vdc
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
• Available in 12 mm Tape and Reel
G
Use MMFT2406T1 to order the 7 inch/1000 unit reel.
Use MMFT2406T3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
Drain–to–Source Voltage V
Gate–to–Source Voltage — Continuous V
Drain Current I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
(1)
DEVICE MARKING
T2406
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Lead Temperature for Soldering Purposes, 1/16″ from case
Time in Solder Bath
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
(1)
D
S
DS
GS
D
P
D
stg
R
θJA
T
L
MEDIUM POWER
TMOS FET
700 mA
240 VOL TS
R
CASE 318E–04, STYLE 3
–65 to 150 °C
83.3 °C/W
= 6.0 OHM
DS(on)
4
1
2
3
TO–261AA
240 Vdc
±20 Vdc
700 mAdc
1.5
12
260
10
Watts
mW/°C
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MMFT2406T1
)
f = 1.0 MHz)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown V oltage
(VGS = 0, ID = 100 µA)
Zero Gate Voltage Drain Current
(VDS = 120 V, VGS = 0)
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.5 Vdc, ID = 0.1 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc)
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance
(VDS = 6.0 V, ID = 0.5 A)
(2)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤2.0%.
(VDS = 25 V, VGS = 0,
f = 1.0 MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
DS(on)
g
FS
C
iss
C
oss
C
rss
240 — Vdc
— 10 µAdc
— 100 nAdc
0.8 2.0 Vdc
—
—
— 3.0 Vdc
300 — mmhos
— 125
— 50
— 20
10
6.0
Ohms
pF
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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