Motorola MMFT107T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT107T1/D
N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• R
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 12 mm Tape and Reel
MAXIMUM RATINGS
Drain–to–Source Voltage V
Gate–to–Source Voltage — Non–Repetitive V
Drain Current I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
DEVICE MARKING
FT107
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient R
Maximum Temperature for Soldering Purposes
Time in Solder Bath
1. Device mounted on FR–4 glass epoxy printed circuit using minimum recommended footprint.
= 14 Ohm Max
DS(on)
Use MMFT107T1 to order the 7 inch/1000 unit reel
Use MMFT107T3 to order the 13 inch/4000 unit reel
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
(1)
2,4 DRAIN
1
GATE
3 SOURCE
DSS
GS
D
P
D
θJA
T
L
stg
Motorola Preferred Device
MEDIUM POWER
TMOS FET
250 mA, 200 VOL TS
R
CASE 318E–04, STYLE 3
–65 to 150 °C
= 14 OHM MAX
DS(on)
1
2
3
TO–261AA
200 Volts
±20 Volts
250 mAdc
0.8
6.4
156 °C/W
260
10
4
Watts
mW/°C
°C
Sec
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MMFT107T1
)
f = 1.0 MHz)
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
(TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Drain–to–Source Breakdown V oltage
(VGS = 0, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 130 V, VGS = 0)
Gate–Body Leakage Current — Reverse
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mA)
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 200 mA)
Forward Transconductance
(VDS = 25 V, ID = 250 mA)
(1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz
SOURCE DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current, Body
Diode
Pulsed Source Current, Body Diode
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤2.0%.
IS = 250 mA)
(VGS = 0,
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
V
F
I
S
I
SM
200 — — Vdc
— — 30 nAdc
— — 10 nAdc
1.0 — 3.0 Vdc
— — 14 Ohms
— — 2.8 Vdc
— 300 — mmhos
— 60 —
— 30 —
— 6.0 —
— 0.8 — V
— — 250
— — 500
pF
mA
2.5
2
1.5
1
, DRAIN CURRENT (AMPS)
D
I
0.5
0
2
TYPICAL ELECTRICAL CHARACTERISTICS
500
D
400
300
200
100
0
VDS = 10 V
TJ = 125°C
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
25°C
–55°C
TJ = 25°C
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
VGS = 10 V
6 V
4 V
3 V
5 V
, DRAIN CURRENT (mA)
I
1086420
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Motorola Small–Signal Transistors, FETs and Diodes Device Data
543210
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