Motorola MMDJ3N03BJT Datasheet
1
Motorola Bipolar Power Transistor Device Data
SO–8 for Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
• Collector –Emitter Sustaining Voltage — V
CEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE
= 100 Vdc (Min) @ IC = 1.0 Adc
= 90 Vdc (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — V
CE(sat)
= 0.235 Vdc (Max) @ IC = 1.2 Adc
= 0.5 Vdc (Max) @ IC = 5.0 Adc
• Miniature SO–8 Surface Mount Package – Saves Board Space
MARKING: 3N3BJT ENG
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V
CB
45
Vdc
Collector–Emitter Voltage
V
CEO
30
Vdc
Emitter–Base Voltage
V
EB
± 8.0
Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
3.0
5.0
Adc
Base Current — Continuous
I
B
1.0
Adc
Operating and Storage Junction Temperature Range
TJ, T
stg
–55 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance – Junction to Ambient
(1)
R
θJA
62.5
_
C/W
Total Power Dissipation @ TA = 25_C
(1)
Derate above 25_C
P
D
2.0
16
Watts
mW/_C
Maximum Temperature for Soldering
T
L
260
_
C
(1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3N03BJT/D
Motorola, Inc. 1996
DUAL BIPOLAR
POWER TRANSISTOR
NPN SILICON
30 VOLTS
3 AMPERES
CASE 751–05, Style 16
(SO–8)
Motorola Preferred Device
Emitter–1
1
2
3
4
8
7
6
5
Top View
Pinout
Base–1
Emitter–2
Base–2
Collector–1
Collector–1
Collector–2
Collector–2
C
B
E
C
B
E
Schematic
MMDJ3N03BJT
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
Temperature Coefficient (Positive)
V
CEO(sus)
—
—
—
—
30
tbd
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
V/°C
Collector Cutoff Current
(VCE = 25 Vdc)
I
CEO
—
—
50
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0 Adc)
I
EBO
—
—
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS
(1)
Collector–Emitter Saturation Voltage
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
V
CE(sat)
—
—
0.130
—
0.235
0.500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
V
BE(sat)
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage
(IC = 2.0 Adc, VCE = 1.0 Vdc)
V
BE(on)
—
—
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
h
FE
100
90
180
165
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
C
ob
—
80
135
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Input Capacitance
(VEB = 8.0 Vdc, f = 1.0 MHz)
C
ibo
—
200
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Current–Gain — Bandwidth Product
(2)
f
T
tbd
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
SWITCHING CHARACTERISTICS
(1)
Resistive Load
Delay Time
t
d
— 215 — ns
Rise Time
(IC = 2.0 Adc, IB1 = IB2 = 30 mAdc, VCC = 10 Vdc) t
r
— 100 — ns
Storage Time t
s
— 530 — ns
Fall Time t
f
— 60 — ns
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S f
test
Loading...