Motorola MMDFS2P102R2 Datasheet

1

Motorola TMOS Product Preview Data

  

FETKY



MOSFET and Schottky Rectifier

The FETKY product family incorporates low R

DS(on)

, true logic level MOSFETs
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers
to offer high efficiency components in a space saving configuration. Independent pinouts
for TMOS and Schottky die allow the flexibility to use a single component for switching
and rectification functions in a wide variety of applications such as Buck Converter,
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage­ment in Battery Packs, Chargers, Cell Phones and other Portable Products.

• HDTMOS Power MOSFET with Low V

F

, Low IR Schottky Rectifier

• Lower Component Placement and Inventory Costs along with

Board Space Savings

• Logic Level Gate Drive — Can be Driven by Logic ICs

• Mounting Information for SO–8 Package Provided

• I

DSS

Specified at Elevated Temperature

• Applications Information Provided

MOSFET MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

(1)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

20 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MW)

V

DGR

20 Vdc

Gate–to–Source Voltage — Continuous V

GS

"

20 Vdc

Drain Current

(3)

— Continuous @ TA = 25°C
— Continuous @ TA = 100°C
— Single Pulse (tp v 10 ms)

I

D

I

D

I

DM

3.3

2.1
20

Adc

Apk

Total Power Dissipation @ TA = 25°C

(2)

P

D

2.0 Watts

Single Pulse Drain–to–Source Avalanche Energy — STAR TING TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25

W

E

AS

324 mJ

SCHOTTKY RECTIFIER MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V

RRM

V

R

20 Volts

Average Forward Current

(3)

(Rated VR) TA = 100°C I

O

1.0 Amps

Peak Repetitive Forward Current

(3)

(Rated VR, Square Wave, 20 kHz) TA = 105°C I

frm

2.0 Amps

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

I

fsm

20 Amps

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

2P102

MMDFS2P102R2 13″ 12 mm embossed tape 2500 units

(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
(3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.

Order this document

by MMDFS2P102/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMDFS2P102

P–Channel Power MOSFET

with Schottky Rectifier

20 Volts

R

DS(on)

= 0.16

W

VF = 0.39 Volts

CASE 751–05, Style 18

(SO–8)

1
2

3

4

8
7

6

5

A
A
S

G

C
C
D
D

TOP VIEW



 Motorola, Inc. 1997

MMDFS2P102

2

Motorola TMOS Product Preview Data

THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET

Thermal Resistance — Junction–to–Ambient

(1)

— MOSFET

R

q

JA

167

°C/W

Thermal Resistance — Junction–to–Ambient

(2)

— MOSFET

R

q

JA

100

Thermal Resistance — Junction–to–Ambient

(3)

— MOSFET

R

q

JA

62.5

Thermal Resistance — Junction–to–Ambient

(1)

— Schottky

R

q

JA

204

Thermal Resistance — Junction–to–Ambient

(2)

— Schottky

R

q

JA

122

Thermal Resistance — Junction–to–Ambient

(3)

— Schottky

R

q

JA

83

Operating and Storage Temperature Range Tj, T

stg

–55 to 150

(1) Mounted with minimum recommended pad size, PC Board FR4.
(2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
(3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

MMDFS2P102

3

Motorola TMOS Product Preview Data

MOSFET ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

(1)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Voltage

(VGS = 0 Vdc, ID = 0.25 mA)
T emperature Coef ficient (Positive)

V

(BR)DSS

20

—

—
25

—
—

Vdc

mV/°C

Zero Gate Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
10

µAdc

Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

(2)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)
T emperature Coef ficient (Negative)

V

GS(th)

1.0
—

1.5

4.0

2.0
—

Vdc

mV/°C

Static Drain–Source Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)

R

DS(on)

—
—

0.118

0.152

0.160

0.180

Ohms

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) g

FS

2.0 3.0 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 420 588 pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— 290 406

Reverse Transfer Capacitance

f = 1.0 MHz)

C

rss

— 116 232

SWITCHING CHARACTERISTICS

(3)

Turn–On Delay Time

t

d(on)

— 19 38 ns

Rise Time

(VDS = 10 Vdc, ID = 2.0 Adc,

t

r

— 66 132

Turn–Off Delay Time

V

GS

= 4.5 Vdc,

RG = 6.0 Ω)

t

d(off)

— 25 50

Fall Time

G

)

t

f

— 37 74

Gate Charge

Q

T

— 15 20

nC

(VDS = 16 Vdc, ID = 2.0 Adc,

Q

1

— 1.2 —

(

DS

,

D

,

VGS = 10 Vdc)

Q

2

— 5.0 —

Q

3

— 4.0 —

DRAIN SOURCE DIODE CHARACTERISTICS

Forward On–Voltage

(2)

(IS = 2.0 Adc,
VGS = 0 Vdc)

V

SD

— 1.5 2.1

V

Reverse Recovery Time

t

rr

— 38 —

ns

(IS = 2.0 Adc, VDD = 15 V,

t

a

— 17 —

(

S

,

DD

,

dIS/dt = 100 A/µs)

t

b

— 21 —

Reverse Recovery Stored Charge Q

RR

— 0.034 — µC

SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Maximum Instantaneous Forward Voltage

(2)

V

F

TJ = 25°C TJ = 125°C

Volts

IF = 1.0 A
IF = 2.0 A

0.47

0.58

0.39

0.53

Maximum Instantaneous Reverse Current

(2)

I

R

TJ = 25°C TJ = 125°C

mA

VR = 20 V

0.05 10

Maximum Voltage Rate of Change VR = 20 V dV/dt 10,000

V/ms

(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%.
(3) Switching characteristics are independent of operating temperature.

MMDFS2P102

4

Motorola TMOS Product Preview Data

TYPICAL FET ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–T o–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

1.20

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

4.0

3.0

2.0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

3.51.0

3.0

2.0

1.0

0

8.0 100

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

0.6

0.4

0.3

0.2

0.1

0

ID, DRAIN CURRENT (AMPS)

0.50

0.20

0.16

0.12

0.08

0.04

1.0

–25 25–50

TJ, JUNCTION TEMPERATURE (

°

C)

1.2

0.8

0.6

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

5.0 200

100

1.0
150

I

D

, DRAIN CURRENT (AMPS)

I

R

1.0

0

0.60.2 0.4 0.8 1.0 1.4 1.6 1.5 2.0 2.5 3.0

4.0

2.0 4.0 6.0 1.5 2.0 2.5 3.0 3.5 4.0

, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)R

DS(on)

50 10075

1.0

10

10

I

DSS

, LEAKAGE (nA)

1.8

, DRAIN CURRENT (AMPS)

D

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

0.5

R , DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

125 150

1.4

1.6
VGS = 10 V

ID = 2.0 A

VGS = 0 V

TJ = 125°C

100°C

TJ = 25°C

VGS = 4.5 V

10 V

TJ = 25°C

ID = 1.0 A

VDS ≥ 10 V

TJ = –55°C

100°C

25°C

TJ = 25°C

3.1 V

VGS = 2.4 V

10 V

4.5 V

3.8 V