Motorola MMDF7N02ZR2 Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

 

Medium Power Surface Mount Products

    !
    

EZFETs are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R

DS(on)

and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model

• Ultra Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS

Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Symbol Max Unit

Drain–to–Source Voltage V

DSS

20 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

20 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 12 Vdc

Drain Current — Continuous @ TA = 25°C

(1)

Drain Current — Continuous @ TA = 70°C

(1)

Drain Current — Pulsed Drain Current

(3)

I

D

I

D

I

DM

7.0

4.6
35

Adc

Total Power Dissipation @ TA = 25°C

(1)

Linear Derating Factor @ TA = 25°C

(1)

P

D

2.0
16

Watts

mW/°C

Total Power Dissipation @ TA = 25°C

(2)

Linear Derating Factor @ TA = 25°C

(2)

P

D

1.39

11.11

Watts

mW/°C

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

THERMAL RESISTANCE

Parameter Symbol Typ Max Unit

Junction–to–Ambient

(1)

Junction–to–Ambient

(2)

R

q

JA

—
—

62.5
90

°C/W

(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V , @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

D7N02Z

MMDF7N02ZR2 13″ 12 mm embossed tape 2500 units

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMDF7N02Z/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1997

Source–1

1
2
3
4

8
7
6
5

Top View

Gate–1

Source–2

Gate–2

Drain–1
Drain–1
Drain–2
Drain–2

D

S

G

CASE 751–05, Style 11

SO–8



DUAL TMOS

POWER MOSFET

7.0 AMPERES
20 VOLTS

R

DS(on)

= 27 m

W

Motorola Preferred Device



MMDF7N02Z

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

V

(BR)DSS

20
—

—
15

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
10

µAdc

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) I

GSS

— — 3.0 µAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage (Cpk ≥ 2.0)

(1) (3)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

0.5
—

0.7

2.5

1.0
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0)

(1) (3)

(VGS = 4.5 Vdc, ID = 7.0 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)

R

DS(on)

—
—

23
30

27
35

mΩ

Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)

(1)

g

FS

5.0 11 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 450 630 pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— 350 490

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 110 155

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 31 62

ns

Rise Time

(VDD = 10 Vdc, ID = 1.0 Adc,

t

r

— 230 460

Turn–Off Delay Time

V

GS

=

4.5 Vd

c,

RG = 6.0 Ω)

(1)

t

d(off)

— 725 1450

Fall Time

G

)

t

f

— 780 1560

Gate Charge

Q

T

— 17 24

nC

See Figure 8

(VDS = 12 Vdc, ID = 5.0 Adc,

Q

1

— 1.4 —

(

DS

,

D

,

VGS = 4.5 Vdc)

(1)

Q

2

— 6.7 —

Q

3

— 6.5 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 7.0 Adc, VGS = 0 Vdc)

(1)

(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)

V

SD

—
—

0.90

0.84

1.1
—

Vdc

Reverse Recovery Time

t

rr

— 780 —

ns

(IS = 7.0 Adc, VGS = 0 Vdc,

t

a

— 190 —

(

S

,

GS

,

dIS/dt = 100 A/µs)

(1)

t

b

— 590 —

Reverse Recovery Stored Charge Q

RR

— 5.7 — µC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

MMDF7N02Z

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE

(NORMALIZED)

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

6.0

12

15

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

Figure 1. On–Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

0 0.5 1.0

0

6.0

12

15

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0 2.0 4.0 10

0.01

0.04

0.06

0 2.0 4.0 6.0 8.0 12

0.05

0.04

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Drain Current

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1.5

2.0

0 4.0 20

1.0

100

10,000

TJ, JUNCTION TEMPERATURE (

°

C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

I

DSS

, LEAKAGE (nA)

VDS ≥ 10 V

TJ = 100°C

25°C

–55°C

TJ = 25°C

VGS = 0 V

ID = 7.0 A
TJ = 25

°

C

VGS = 2.7 V

VGS = 4.5 V
ID = 3.5 A

1.5 2.0 2.5

6.0 8.0 10

4.5 V

–50 –25 0 25 50 75 100 125 150

TJ = 125°C

1.0
10

8.0

25°C

100°C

R

DS(on)

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0 0.5 1.0

1.5 2.0

3.0

10 V

1.9 V

VGS = 1.7 V

2.3 V

4.5 V

TJ = 25°C

9.0

3.0

9.0

0.03

0.02

0.05

0.01

0.02

0.03

0

0.5

0

0.1
12

2.1 V

1000

16