Motorola MMDF6N03HDR2 Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

  

Medium Power Surface Mount Products

   
  

Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
R

DS(on)

and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica­tions are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.

• Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

DSS

Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

30 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Single Pulse (tp ≤ 10 µs)

I

D

I

DM

6.0
30

Adc
Apk

Source Current — Continuous @ TA = 25°C I

S

1.7 Adc

Total Power Dissipation @ TA = 25°C

(1)

P

D

2.0 Watts

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)

E

AS

325 mJ

Thermal Resistance — Junction–to–Ambient R

θJA

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec. T

L

260 °C

DEVICE MARKING

D6N03

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMDF6N03HDR2 13″ 12 mm embossed tape 2500

Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMDF6N03HD/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1997

Source–1

1
2
3
4

8
7
6
5

Top View

Gate–1

Source–2

Gate–2

Drain–1
Drain–1
Drain–2
Drain–2

D

S

G

CASE 751–05, Style 11

SO–8



DUAL TMOS

POWER MOSFET

30 VOLTS

R

DS(on)

= 35 m

W

Motorola Preferred Device



D

S

G

REV 2

MMDF6N03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V

(BR)DSS

30 — —

Vdc

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
20

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

1.0 — —

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)

R

DS(on)

—
—

28
42

35
50

mΩ

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) g

FS

— 9.0 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

V

= 24 Vdc

C

iss

— 430 600 pF

Output Capacitance

(V

DS

= 24

Vdc

,

VGS = 0 Vdc,

C

oss

— 217 300

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 67.5 135

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 8.2 16.4

ns

Rise Time

(V

DD

=

15 Vd

c,

VGS = 10 Vdc,

t

r

— 8.48 16.9

Turn–Off Delay Time

GS

,

ID = 1.0 Adc,

t

d(off)

— 89.6 179

Fall Time

R

G

= 6.0

Ω)

t

f

— 61.1 122

Turn–On Delay Time

t

d(on)

— 11.8 23

ns

Rise Time

(V

DD

=

15 Vd

c,

VGS = 4.5 Vdc,

t

r

— 51.3 102

Turn–Off Delay Time

GS

,

ID = 1.0 Adc,

t

d(off)

— 47.2 94.5

Fall Time

R

G

=

6.0 Ω)

t

f

— 62 104

Gate Charge

Q

T

— 15.7 31.4

nC

(See Figure 8)

(VDS = 15 Vdc,

Q

1

— 2.0 —

I

D

= 5.0 Adc,

VGS = 10 Vdc)

Q

2

— 4.6 —

GS

)

Q

3

— 3.86 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc,

TJ = 125°C)

V

SD

—
—

0.77

0.65

1.2

—

Vdc

Reverse Recovery Time

t

rr

— 54.5 —

ns

(IS = 5.0 Adc, VGS = 0 Vdc,

t

a

— 14.8 —

(

S

,

GS

,

dIS/dt = 100 A/µs)

t

b

— 39.7 —

Reverse Recovery Stored Charge Q

RR

— 0.048 — µC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

MMDF6N03HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–T o–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

1.2 2.00

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

12

8.0

10

6.0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

4.5 5.01.5

8.0

4.0

2.0

0

8.0 102.0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

0.30

0.20

0.15

0.10

0.05

0

ID, DRAIN CURRENT (AMPS)

2.01.0

0.050

0.045

0.040

0.035

0.030

0.025

3.09.0

–25 25–50

TJ, JUNCTION TEMPERATURE (

°

C)

1.2

0.8

0.6

0.4

0.2
0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

5.0 300

1000

100

1.0

0.1
150

I

D

, DRAIN CURRENT (AMPS)

I

R

4.0

2.0

0

0.60.2 0.4 0.8 1.0 1.4 1.6 2.0 2.5 3.0 3.5 4.0

6.0

10

12

3.0 4.0 5.0 6.0 7.0 4.0 5.0 6.0 7.0 8.0 9.0

, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)R

DS(on)

50 10075

1.0

10 20 25

10

I

DSS

, LEAKAGE (nA)

1.8

, DRAIN CURRENT (AMPS)

D

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

0.25

R , DRAIN–TO–SOURCE RESISTANCE (OHMS)

DS(on)

125 150

1.6

1.4

1.8
VGS = 10 V

ID = 3 A

VGS = 0 V

TJ = 125°C

100°C

25°C

TJ = 25°C

VGS = 4.5 V

10 V

TJ = 25°C
ID = 6 A

VDS ≥ 10 V

TJ = –55°C

100°C

25°C

TJ = 25°C

2.7 V

2.9 V

3.1 V

3.3 V

3.5 V

VGS = 2.5 V

10 V

6.0 V

4.5 V

4.3 V

4.1 V

3.7 V

3.9 V