Motorola MMDF6N02HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
R
DS(on)
and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
20 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 12 Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
6.5
6.0
52
Adc
Apk
Total Power Dissipation @ TA = 25°C
(1)
P
D
2.0 Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Thermal Resistance — Junction to Ambient R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes T
L
260 °C
DEVICE MARKING
D6N02H
(1) Mounted on 1” square FR4 or G–10 board (VGS = 4.5 V , @ 10 seconds).
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF6N02HDR2 13″ 12mm embossed tape 2500
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of
the Bergquist Company.
Order this document
by MMDF6N02HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
DUAL TMOS
POWER MOSFET
6.0 AMPERES
20 VOLTS
R
DS(on)
= 0.035 OHM
Motorola Preferred Device
REV 1
MMDF6N02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
V
(BR)DSS
20
—
—
24.3
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
2.5
25
µAdc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) I
GSS
— 0.3 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage (Cpk ≥ 2.0) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
0.5
—
0.8
2.86
1.2
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (3)
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
R
DS(on)
—
—
28
42
35
49
mΩ
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc) g
FS
7.0 8.6 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 515 572 pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
C
oss
— 345 372
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 150 178
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 12 15
ns
Rise Time
(VDD = 10 Vdc, ID = 3.5 Adc,
t
r
— 96 103
Turn–Off Delay Time
V
GS
=
4.0 Vd
c,
RG = 10 Ω)
t
d(off)
— 100 108
Fall Time
G
)
t
f
— 130 140
Gate Charge
Q
T
— 11 12
nC
See Figure 8
(VDS = 16 Vdc, ID = 6.0 Adc,
Q
1
— 1.2 —
(
DS
,
D
,
VGS = 4.0 Vdc)
Q
2
— 6.1 —
Q
3
— 3.9 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.84
0.77
1.2
—
Vdc
Reverse Recovery Time
t
rr
— 102 —
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
t
a
— 36 —
(
S
,
GS
,
dIS/dt = 100 A/µs)
t
b
— 66 —
Reverse Recovery Stored Charge Q
RR
— 0.150 — µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
MMDF6N02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
2.7 V
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
4
8
12
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
0 0.5 1
3
0
4
8
12
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
234 10
0
0.015
0.03
0.045
13579 13
0.05
0.06
0.07
0.04
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–T o–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
0 2.5 5 20
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
VDS ≥ 10 V
TJ = 100°C
25°C
–55°C
TJ = 25°C
VGS = 0 V
ID = 6 A
TJ = 25
°
C
VGS = 2.5 V
VGS = 4.5 V
ID = 3 A
1.5 2 2.5
56789 11
4.5 V
–50 –25 0 25 50 75 100 125 150
TJ = 125°C
0.8
10
7.5 10
25°C
100°C
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0 0.2 0.4 0.6 0.8 1.41 1.2
1.6 1.8 2
2
2.1 V
1.7 V
1.9 V
VGS = 10 V
2.3 V
2.5 V
4.5 V
TJ = 25°C
10
6
2
6
10
0.01
0.025
0.04
0.005
0.02
0.035
0.01
0.02
0.03
0
0.4
0.2
0
0.1
12.5 15 17.5
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