Motorola MMDF3N06HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low R
DS(on)
and true
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
60 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 20 Vdc
Drain Current — Continuous @ TA = 25°C I
D
I
DM
3.3
16.5
Adc
Apk
Source Current — Continuous @ TA = 25°C I
S
1.7 Adc
Total Power Dissipation @ TA = 25°C (1) P
D
2.0 Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 Ω)
E
AS
105
mJ
Thermal Resistance — Junction–to–Ambient R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF3N06HDR2 13″ 12 mm embossed tape 2500 units
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N06HD/D
Motorola, Inc. 1997
DUAL TMOS
POWER MOSFET
60 VOLTS
R
DS(on)
= 100 m
W
CASE 751–05, Style 11
SO–8
D
S
G
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
Motorola Preferred Device
D
S
G
Preferred devices are Motorola recommended choices for future use and best overall value.
MMDF3N06HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V
(BR)DSS
60 — —
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0 Vdc)
(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
0.001
0.05
1.0
25
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I
GSS
— 12 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
V
GS(th)
1.0 — —
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
R
DS(on)
—
—
67.5
82.5
100
200
m
W
Forward Transconductance
(VDS = 15 Vdc, ID = 1.5 Adc)
g
FS
— 7.5 —
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 442 618 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
C
oss
— 97.6 137
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 24.4 34.2
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 10.6 22.1 ns
Rise Time
(VDD = 30 Vdc, ID = 3.3 Adc,
t
r
— 15.9 31.8
Turn–Off Delay Time
V
GS
= 4.5 Vdc,
RG = 30 Ω)
t
d(off)
— 23.8 47.6
Fall Time
G
)
t
f
— 14.7 29.4
Turn–On Delay Time
t
d(on)
— 7.0 14 ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
t
r
— 4.8 9.6
Turn–Off Delay Time
V
GS
= 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 32.4 64.8
Fall Time
G
)
t
f
— 14.2 28.4
Gate Charge
Q
T
— 14.5 29 nC
(See Figure 8)
(VDS = 30 Vdc, ID = 3.3 Adc,
Q
1
— 1.8 —
(
DS
,
D
,
VGS = 10 Vdc)
Q
2
— 3.5 —
Q
3
— 3.75 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.78
0.65
1.2
—
Vdc
Reverse Recovery Time
t
rr
— 27.9 —
ns
(IS = 1.7 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/µs
)
t
a
— 23 —
dIS/dt = 100 A/µs)
t
b
— 4.9 —
Reverse Recovery Stored Charge Q
RR
— 0.038 — µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
MMDF3N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
DSS
, LEAKAGE (nA)
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
0 0.4 0.8 1.2 1.6 2.0
0
1.0
3.0
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.2
0.25
0.3
0.06
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
1000
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
100°
C
0.15
4.0
2.0
0.05
TJ = 25°C
2.0
4.0
6.0
5.0
1.0
1.5 2.0 2.5 3.0 3.5
0.1
0.09
1.0 1.5 2.0 3.5 5.0
10
0 5.0 10 15 30
2.3 V
20 25
0
0.07
0.085
3.0
2.0 3.0 4.0 5.0 8.06.0 7.0
9.0 10
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
2.5 3.0
10 V
VGS = 4.5 V
TJ = 25°C
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
0
0.2
1.0
1.2
1.8
VGS = 10 V
ID = 1.5 A
1257525–25
VGS = 0 V
TJ = 125°C
0.2 0.6
1.81.41.0
5.0
6.0
4.5 V
4.3 V
4.1 V
VGS = 10 V
ID = 3.0 A
TJ = 25
°
C
1.75 2.752.25 3.25
0.065
0.075
0.08
4.5
4.0
0.4
0.6
0.8
1.4
1.6
1.0
100
25°C
2.1 V
2.5 V
2.7 V
2.9 V
3.1 V
6.0 V
3.3 V
3.5 V
3.7 V
3.9 V
25°
C
100°C
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