MOTOROLA MMDF3N06HD Technical data
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SEMICONDUCTOR TECHNICAL DATA
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Medium Power Surface Mount Products
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low R
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
• Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
Specified at Elevated Temperature
DSS
• Mounting Information for SO–8 Package Provided
DS(on)
and true
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
60 VOLTS
R
D
G
S
D
G
CASE 751–05, Style 11
Source–1
Gate–1
Source–2
Gate–2
DS(on)
= 100 m
SO–8
1
8
2
7
3
6
4
5
W
Drain–1
Drain–1
Drain–2
Drain–2
S
MAXIMUM RATINGS
Drain–to–Source Voltage V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous @ TA = 25°C I
Source Current — Continuous @ TA = 25°C I
Total Power Dissipation @ TA = 25°C (1) P
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance — Junction–to–Ambient R
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DSS
GS
D
I
DM
S
E
AS
θJA
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF3N06HDR2 13″ 12 mm embossed tape 2500 units
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Top View
60 Vdc
± 20 Vdc
3.3
16.5
1.7 Adc
D
stg
L
2.0 Watts
– 55 to 150 °C
105
62.5 °C/W
260 °C
Adc
Apk
mJ
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MMDF3N06HD
)
f = 1.0 MHz)
V
G
)
V
G
)
(
DS
,
D
,
)
dIS/dt = 100 A/µs)
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0 Vdc)
(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
Forward Transconductance
(VDS = 15 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(1)
(TA = 25°C unless otherwise noted)
(VDS = 25 Vdc, VGS = 0 Vdc,
(2)
(VDD = 30 Vdc, ID = 3.3 Adc,
(VDD = 15 Vdc, ID = 3.0 Adc,
(VDS = 30 Vdc, ID = 3.3 Adc,
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
f = 1.0 MHz
= 4.5 Vdc,
GS
RG = 30 Ω)
= 10 Vdc,
GS
RG = 9.1 Ω)
VGS = 10 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
dI
/dt = 100 A/µs
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
V
SD
t
rr
t
a
t
b
RR
60 — —
—
—
— 12 100 nAdc
1.0 — —
—
—
— 7.5 —
— 442 618 pF
— 97.6 137
— 24.4 34.2
— 10.6 22.1 ns
— 15.9 31.8
— 23.8 47.6
— 14.7 29.4
— 7.0 14 ns
— 4.8 9.6
— 32.4 64.8
— 14.2 28.4
T
1
2
3
— 14.5 29 nC
— 1.8 —
— 3.5 —
— 3.75 —
—
—
— 27.9 —
— 23 —
— 4.9 —
— 0.038 — µC
0.001
0.05
67.5
82.5
0.78
0.65
1.0
25
100
200
1.2
—
Vdc
µAdc
Vdc
m
W
Mhos
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMDF3N06HD
6.0
VGS = 10 V
6.0 V
5.0
4.5 V
4.3 V
4.0
4.1 V
3.0
2.0
, DRAIN CURRENT (AMPS)
D
I
1.0
0
0.2 0.6
0 0.4 0.8 1.2 1.6 2.0
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
3.9 V
3.3 V
3.5 V
3.7 V
3.1 V
TJ = 25°C
2.9 V
2.7 V
2.5 V
2.3 V
2.1 V
Figure 1. On–Region Characteristics
0.3
ID = 3.0 A
TJ = 25
°
0.25
0.2
0.15
C
6.0
VDS ≥ 10 V
5.0
100°
4.0
3.0
2.0
, DRAIN CURRENT (AMPS)
D
I
1.0
1.81.41.0
0
1.75 2.752.25 3.25
1.5 2.0 2.5 3.0 3.5
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
C
TJ = –55°C
25°
C
Figure 2. Transfer Characteristics
0.09
TJ = 25°C
0.085
0.08
0.075
VGS = 4.5 V
0.1
0.05
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
DS(on)
2.0 3.0 4.0 5.0 8.06.0 7.0
R
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source V oltage
1.8
VGS = 10 V
1.6
ID = 1.5 A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)
0
–50 0 50 100 150
DS(on)
R
TJ, JUNCTION TEMPERATURE (°C)
9.0 10
1257525–25
0.07
10 V
0.065
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.06
DS(on)
1.0 1.5 2.0 3.5 5.0
R
2.5 3.0
ID, DRAIN CURRENT (AMPS)
4.0
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
VGS = 0 V
100
10
, LEAKAGE (nA)
DSS
I
1.0
0
0 5.0 10 15 30
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
TJ = 125°C
100°C
25°C
20 25
4.5
Figure 5. On–Resistance Variation
with Temperature
Motorola TMOS Power MOSFET Transistor Device Data
Figure 6. Drain–to–Source Leakage Current
versus V oltage
3
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