Motorola MMDF3N02HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFET s feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable a nd battery p owered p roducts such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and t ape drives. T he avalanche e nergy i s specified t o
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
20 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 20 Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
3.8
2.6
19
Adc
Apk
Total Power Dissipation @ TA = 25°C
(1)
P
D
2.0 Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 Ω)
E
AS
405 mJ
Thermal Resistance — Junction to Ambient
(1)
R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
DEVICE MARKING
D3N02
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF3N02HDR2 13″ 12 mm embossed tape 2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3N02HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
DUAL TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
R
DS(on)
= 0.090 OHM
Motorola Preferred Device
REV 5
MMDF3N02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
20
—
—
29
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
R
DS(on)
—
—
0.058
0.074
0.090
0.100
Ohms
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) g
FS
2.0 3.88 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 455 630 pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 184 250
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 45 90
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 11 22
Rise Time
t
r
— 58 116
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)
t
d(off)
— 17 35
Fall Time
G
= 6.0 Ω)
t
f
— 20 40
Turn–On Delay Time
t
d(on)
— 7.0 21
Rise Time
t
r
— 32 64
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 Ω)
t
d(off)
— 27 54
Fall Time
G
= 6.0 Ω)
t
f
— 21 42
Q
T
— 12.5 18
See Figure 8
DS
= 16 Vdc, ID = 3.0 Adc,
Q
1
— 1.3 —
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q
2
— 2.8 —
Q
3
— 2.4 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.79
0.72
1.3
—
Vdc
t
rr
— 23 —
See Figure 15
S
= 3.0 Adc, VGS = 0 Vdc,
t
a
— 18 —
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 5.0 —
Reverse Recovery Stored Charge Q
RR
— 0.025 — µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 10 Vdc, ID = 3.0 Adc,
(VDD = 10 Vdc, ID = 3.0 Adc,
(V
(I
ns
nC
ns
MMDF3N02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
3.9 V
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0
2
4
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
1 1.4 1.8 3.4
0
2
4
6
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 1 2 3 4 10
0
0.2
0.4
0.6
0 1 2 3 4 6
0.05
0.06
0.07
0.08
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
0 4 8 20
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
VDS ≥ 10 V
TJ = 100°C
25°C
–55°C
TJ = 25°C
VGS = 0 V
ID = 1.5 A
TJ = 25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A
2.2 2.6 3
5 6 7 8 9 5
10 V
–50 –25 0 25 50 75 100 125 150
TJ = 125°C
0.8
10
12 16
25°C
100°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6 0.8 1.41 1.2
1.6 1.8 2
1
3.7 V
3.1 V
2.7 V
2.9 V
VGS = 10 V
3.3 V
3.5 V
2.5 V
4.5 V
TJ = 25°C
5
3
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