Motorola MMDF3207R2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Ultra Low R
DS(on)
Provides Higher Efficiency and
Extends Battery Life in Portable Applications
• Characterized Over a Wide Range of Power Ratings
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Miniature SO–8 Surface Mount Package —
Saves Board Space
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
D3207
MMDF3207R2 13″ 12 mm embossed tape 2500 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3207/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
SOURCE 1
TOP VIEW
GATE 1
SOURCE 2
GATE 2
DRAIN 1
DRAIN 1
DRAIN 2
DRAIN 2
CASE 751–06, Style 13
SO–8
DUAL TMOS
POWER MOSFET
7.8 AMPERES
20 VOLTS
R
DS(on)
= 33 m
W
Motorola Preferred Device
S
G
D
1
2
3
4
8
7
6
5
MMDF3207
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25°C unless otherwise specified)
Characteristics
Symbol Maximum Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MW)
Gate–to–Source Voltage — Continuous
V
DSS
V
DGR
V
GS
20
12
±
1
2
V
1 Inch Square @
10 seconds on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current
(1)
R
THJA
P
D
I
D
I
D
I
DM
62.5
2.0
16
7.8
5.7
40
°C/W
Watts
mW/°C
A
A
A
1 Inch Square @
Steady State on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current
(1)
R
THJA
P
D
I
D
I
D
I
DM
98
1.28
10.2
6.2
4.6
35
°C/W
Watts
mW/°C
A
A
A
Minimum Pad @
Steady State on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current
(1)
R
THJA
P
D
I
D
I
D
I
DM
166
0.75
6.0
4.8
3.5
30
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
(1) Repetitive rating; pulse width limited by maximum junction temperature.
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