Motorola MMDF3200Z Datasheet
D3200
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3200Z/D
Medium Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Zener Protected Gates Provide Electrostatic
Discharge Protection
• Designed to withstand 200 V Machine Model
and 2000 V Human Body Model
• Low R
Provides Higher Efficiency and
DS(on)
Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Miniature SO–8 Surface Mount Package —
Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
Specified at Elevated Temperature
DSS
• Mounting Information for SO–8 Package Provided
N1–GATE
2
8
1
N1–SOURCE
6
N1–DRAIN7
N2–DRAIN5
Motorola Preferred Device
DUAL TMOS
POWER MOSFET
11.5 AMPERES
20 VOLTS
R
CASE 751–06, Style 11
N1–Source
N1–Gate
N2–Source
N2–Gate
DS(on)
= 0.015 OHM
SO–8
1
8
2
7
3
6
4
5
TOP VIEW
N1–Drain
N1–Drain
N2–Drain
N2–Drain
N2–GATE
4
3
N2–SOURCE
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
Operating and Storage Temperature Range TJ, T
(TJ = 25°C unless otherwise noted)
Rating
Symbol Max Unit
DSS
DGR
GS
stg
20 V
20 V
± 12 V
– 55 to 150 °C
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF3200Z 13″ 12 mm embossed tape 4000 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MMDF3200Z
MAXIMUM RATINGS
(TJ = 25°C unless otherwise specified)
When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ 10 Seconds)
Parameter Symbol Maximum Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Thermal Resistance — Junction to Ambient R
Continuous Source Current (Diode Current) I
(1)
I
DM
P
I
D
I
D
D
θJA
S
When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ Steady State)
Parameter Symbol Maximum Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Thermal Resistance — Junction to Ambient R
Continuous Source Current (Diode Current) I
(1)
I
DM
P
I
D
I
D
D
θJA
S
When mounted on minimum FR–4 or G–10 board (VGS = 10 V @ Steady State)
Parameter Symbol Maximum Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Thermal Resistance — Junction to Ambient R
Continuous Source Current (Diode Current) I
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(1)
I
DM
P
I
D
I
D
D
θJA
S
11.5
9.2
57.5
2.0
16
62.5 °C/W
TBD A
8.0
5.9
40
1.28
10.2
98 °C/W
TBD A
7.1
5.2
35.5
0.75
6.0
166 °C/W
TBD A
A
A
A
Watts
mW/°C
A
A
A
Watts
mW/°C
A
A
A
Watts
mW/°C
2
Motorola TMOS Power MOSFET Transistor Device Data
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