Motorola MMBT918LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Base Voltage V
CBO
30 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Collector Current — Continuous I
C
50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT918LT1 = M3B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
V
(BR)CEO
15 — Vdc
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V
(BR)CBO
30 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
3.0 — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— 50 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBT918LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MMBT918LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
h
FE
20 — —
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
CE(sat)
— 0.4 Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
V
BE(sat)
— 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
600 — MHz
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
—
—
3.0
1.7
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— 2.0 pF
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 Ω, f = 60 MHz) (Figure 1)
NF — 6.0 dB
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
P
out
30 — mW
Common–Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
G
pe
11 — dB
Figure 1. NF, Gpe Measurement Circuit 20–200
V
BB
V
CC
EXTERNAL
100 k
0.018
µ
F
0.018
µ
F
3
1000 pF BYPASS
0.018
µ
F
0.018 µF
50
Ω
RF
VM
NF TEST CONDITIONS
IC = 1.0 mA
VCE = 6.0 VOLTS
RS = 50
Ω
f = 60 MHz
Gpe TEST CONDITIONS
IC = 6.0 mA
VCE = 12 VOLTS
f = 200 MHz
C
G
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