Motorola MMBT6520LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–350 Vdc
Collector–Base Voltage V
CBO
–350 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Base Current I
B
–250 mA
Collector Current — Continuous I
C
–500 mAdc
DEVICE MARKING
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mA) V
(BR)CEO
–350 — Vdc
Collector–Base Breakdown Voltage (IC = –100 µA) V
(BR)CBO
–350 — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µA) V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current (VCB = –250 V) I
CBO
— –50 nA
Emitter Cutoff Current (VEB = –4.0 V) I
EBO
— –50 nA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT6520LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MMBT6520LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mA, VCE = –10 V)
(IC = –10 mA, VCE = –10 V)
(IC = –30 mA, VCE = –10 V)
(IC = –50 mA, VCE = –10 V)
(IC = –100 mA, VCE = –10 V)
h
FE
20
30
30
20
15
—
—
200
200
—
—
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –1.0 mA)
(IC = –20 mA, IB = –2.0 mA)
(IC = –30 mA, IB = –3.0 mA)
(IC = –50 mA, IB = –5.0 mA)
V
CE(sat)
—
—
—
—
–0.30
–0.35
–0.50
–1.0
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –1.0 mA)
(IC = –20 mA, IB = –2.0 mA)
(IC = –30 mA, IB = –3.0 mA)
V
BE(sat)
—
—
—
–0.75
–0.85
–0.90
Vdc
Base–Emitter On Voltage
(IC = –100 mA, VCE = –10 V)
V
BE(on)
— –2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –20 V, f = 20 MHz)
f
T
40 200 MHz
Collector–Base Capacitance
(VCB= –20 V, f = 1.0 MHz)
C
cb
— 6.0 pF
Emitter–Base Capacitance
(VEB= –0.5 V, f = 1.0 MHz)
C
eb
— 100 pF
MMBT6520LT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
h
FE
, DC CURRENT GAIN
200
100
20
30
50
70
VCE = 10 V
TJ = 125°C
25°C
–55°C
Figure 2. Current–Gain — Bandwidth Product
Figure 3. “On” Voltages
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
0.4
0.2
TJ = 25°C
V
BE(sat)
@ IC/IB = 10
V
BE(on)
@ VCE = 10 V
V
CE(sat)
@ IC/IB = 10
V
CE(sat)
@ IC/IB = 5.0
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
R
θ
VC
for V
CE(sat)
R
θ
VB
for V
BE
25°C to 125°C
–55°C to 25°C
–55°C to 125°C
I
C
I
B
+
10
Figure 4. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
1.0
C, CAPACITANCE (pF)
7.0
10
20
30
50
TJ = 25°C
C
cb
C
eb
Figure 5. Capacitance
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (ns)
1.0 k
20
10
30
50
70
100
200
300
500
700
td @ V
BE(off)
= 2.0 V
t
r
V
CE(off)
= 100 V
IC/IB = 5.0
TJ = 25°C
Figure 6. Turn–On Time
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