Motorola MMBT6517LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
350 Vdc
Collector–Base Voltage V
CBO
350 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Base Current I
B
250 mAdc
Collector Current — Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
V
(BR)CEO
350 —
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc)
V
(BR)CBO
350 —
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc)
V
(BR)EBO
6.0 —
Vdc
Collector Cutoff Current
(VCB = 250 Vdc)
I
CBO
— 50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc)
I
EBO
— 50
nAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT6517LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MMBT6517LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
h
FE
20
30
30
20
15
—
—
200
200
—
—
Collector–Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
CE(sat)
—
—
—
—
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
V
BE(sat)
—
—
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
V
BE(on)
— 2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
f
T
40 200
MHz
Collector–Base Capacitance
(VCB = 20 Vdc, f = 1.0 MHz)
C
cb
— 6.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, f = 1.0 MHz)
C
eb
— 80
pF
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT6517LT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
200
100
10
20
50
70
VCE = 10 V
TJ = 125°C
25°C
–55°C
Figure 2. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
h
FE
, DC CURRENT GAIN
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
30
Figure 3. “On” Voltages
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
0.4
0.2
TJ = 25°C
V
BE(sat)
@ IC/IB = 10
V
BE(on)
@ VCE = 10 V
V
CE(sat)
@ IC/IB = 10
V
CE(sat)
@ IC/IB = 5.0
Figure 4. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
R
θ
VC
for V
CE(sat)
R
θ
VB
for V
BE
25°C to 125°C
–55°C to 25°C
–55°C to 125°C
I
C
I
B
+
10
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
1.0
C, CAPACITANCE (pF)
7.0
10
20
30
50
TJ = 25°C
C
cb
C
eb
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