Motorola MMBT440LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(3)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
40 —
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V
(BR)CBO
60 —
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V
(BR)EBO
6.0 —
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
I
BEV
— 0.1
µAdc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
I
CEX
— 0.1
µAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT4401LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MMBT4401LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (continued) (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
h
FE
20
40
80
100
40
—
—
—
300
—
—
Collector–Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
V
CE(sat)
—
—
0.4
0.75
Vdc
Base–Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
V
BE(sat)
0.75
—
0.95
1.2
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
250 —
MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 6.5
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
eb
— 30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
ie
1.0 15
kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
re
0.1 8.0
X 10
–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
fe
40 500
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
oe
1.0 30
m
mhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, VEB = 2.0 Vdc,
t
d
— 15
Rise Time
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
t
r
— 20
ns
Storage Time
(V
CC
= 30 Vdc, IC = 150 mAdc,
t
s
— 225
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
t
f
— 30
ns
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
–2.0 V
< 2.0 ns
0
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1.0 k
Ω
+30 V
200
Ω
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1.0 k
Ω
+30 V
200
Ω
CS* < 10 pF
–4.0 V
MMBT4401LT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10
20
2.0
30 50
CAPACITANCE (pF)
Q, CHARGE (nC)
3.0
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100
200
0.1
300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise and Fall Times
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
C
obo
Q
T
Q
A
25
°
C 100°C
TRANSIENT CHARACTERISTICS
3.01.00.50.30.2
0.3
0.2
30
t
s
, STORAGE TIME (ns)
′
t, TIME (ns)
t, TIME (ns)t
f
, FALL TIME (ns)
C
cb
70
100
10 20 50 70 100
200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100
200 300 500
30
VCC = 30 V
IC/IB = 10
t
r
t
f
10 20 50 70 100
200 300
500
30
100
200
30
70
50
300
10 20 50 70 100
200 300
500
30
ts′
= ts – 1/8 t
f
IB1 = I
B2
IC/IB = 10 to 20
VCC = 30 V
IB1 = I
B2
IC/IB = 20
IC/IB = 10
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