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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT4403LT1/D
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBT4403LT1 = 2T
CEO
CBO
EBO
P
R
P
R
C
D
q
JA
D
q
JA
stg
COLLECTOR
3
1
BASE
2
EMITTER
–40 Vdc
–40 Vdc
–5.0 Vdc
–600 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
Collector Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
(3)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
–40 —
Vdc
Vdc
–40 —
Vdc
–5.0 —
µAdc
— –0.1
µAdc
— –0.1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
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MMBT4403LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
(IC = –500 mAdc, VCE = –2.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base–Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
(3)
(3)
(3)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
(VCC = –30 Vdc, VEB = –2.0 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
h
FE
V
CE(sat)
V
BE(sat)
f
C
C
h
h
h
h
t
t
t
oe
t
T
cb
eb
ie
re
fe
d
s
Vdc
Vdc
MHz
X 10
m
mhos
—
pF
pF
kΩ
–4
—
30
60
100
100
20
—
—
–0.75
—
200 —
— 8.5
— 30
1.5 15
0.1 8.0
60 500
1.0 100
— 15
r
f
— 20
— 225
— 30
—
—
—
300
—
–0.4
–0.75
–0.95
–1.3
SWITCHING TIME EQUIVALENT TEST CIRCUIT
–30 V
200
+2 V
0
–16 V
< 2 ns
10 to 100 µs,
DUTY CYCLE = 2%
1.0 k
Ω
+14 V
0
Ω
CS* < 10 pF
–16 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
< 20 ns
1.0 k
Ω
1.0 to 100 µs,
DUTY CYCLE = 2%
+4.0 V
Figure 1. T urn–On Time Figure 2. T urn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–30 V
200
Ω
CS* < 10 pF
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TRANSIENT CHARACTERISTICS
°
C 100°C
25
MMBT4403LT1
30
20
10
7.0
5.0
CAPACITANCE (pF)
2.0
0.1 2.0 5.0 10
0.7 7.0
REVERSE VOL TAGE (VOLTS)
C
eb
3.01.00.50.30.2
Figure 3. Capacitances
100
70
50
tr @ VCC = 30 V
30
20
t, TIME (ns)
10
7.0
5.0
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
tr @ VCC = 10 V
td @ V
td @ V
C
cb
20
30
IC/IB = 10
= 2 V
BE(off)
= 0
BE(off)
200 300 500
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
Q, CHARGE (nC)
0.3
0.2
0.1
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100
70
50
30
20
, RISE TIME (ns)
r
t
10
7.0
5.0
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 10
Q
T
Q
A
200
300 500
VCC = 30 V
IC/IB = 10
200 300 500
Figure 5. Turn–On Time
200
100
70
50
IB1 = I
, STORAGE TIME (ns)
′
s
t
30
20
10 20 50 70 100
B2
t
′
= ts – 1/8 t
s
f
30
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC/IB = 20
IC/IB = 10
200 300
Figure 6. Rise Time
500
3