MOTOROLA MMBT4403LT1, MMBT4403LT3 Datasheet



SEMICONDUCTOR TECHNICAL DATA

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBT4403LT1 = 2T

CEO
CBO
EBO

P

R

P

R

C

D

q

JA
D

q

JA

stg

COLLECTOR

3

1

BASE

2

EMITTER

–40 Vdc
–40 Vdc

–5.0 Vdc

–600 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

mW

mW/°C

mW

mW/°C



Motorola Preferred Device

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = –0.1 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = –0.1 mAdc, IC = 0)

Base Cutoff Current

(VCE = –35 Vdc, VEB = –0.4 Vdc)

Collector Cutoff Current

(VCE = –35 Vdc, VEB = –0.4 Vdc)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

(3)

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BEV

I

CEX

–40 —

Vdc

Vdc

–40 —

Vdc

–5.0 —

µAdc

— –0.1

µAdc

— –0.1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

1

MMBT4403LT1

(

CC

,

EB

,

ns

(

CC

,

C

,

ns

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
(IC = –500 mAdc, VCE = –2.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)

Base–Emitter Saturation Voltage (3)

(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)

(3)
(3)

(3)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

Voltage Feedback Ratio

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

Small–Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

Output Admittance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

(VCC = –30 Vdc, VEB = –2.0 Vdc,

IC = –150 mAdc, IB1 = –15 mAdc)

(VCC = –30 Vdc, IC = –150 mAdc,

IB1 = IB2 = –15 mAdc)

h

FE

V

CE(sat)

V

BE(sat)

f

C

C

h

h

h

h

t
t
t

oe

t

T

cb

eb

ie

re

fe

d

s

Vdc

Vdc

MHz

X 10

m

mhos

—

pF

pF

kΩ

–4

—

30

60
100
100

20

—

—

–0.75

—

200 —

— 8.5

— 30

1.5 15

0.1 8.0

60 500

1.0 100

— 15

r

f

— 20

— 225

— 30

—
—
—

300

—

–0.4

–0.75

–0.95

–1.3

SWITCHING TIME EQUIVALENT TEST CIRCUIT

–30 V

200

+2 V

0

–16 V

< 2 ns

10 to 100 µs,
DUTY CYCLE = 2%

1.0 k

Ω

+14 V

0

Ω

CS* < 10 pF

–16 V

Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope

< 20 ns

1.0 k

Ω

1.0 to 100 µs,
DUTY CYCLE = 2%

+4.0 V

Figure 1. T urn–On Time Figure 2. T urn–Off Time

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

–30 V

200

Ω

CS* < 10 pF

TRANSIENT CHARACTERISTICS

°

C 100°C

25

MMBT4403LT1

30

20

10

7.0

5.0

CAPACITANCE (pF)

2.0

0.1 2.0 5.0 10

0.7 7.0

REVERSE VOL TAGE (VOLTS)

C

eb

3.01.00.50.30.2

Figure 3. Capacitances

100

70
50

tr @ VCC = 30 V

30

20

t, TIME (ns)

10

7.0

5.0
10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

tr @ VCC = 10 V
td @ V
td @ V

C

cb

20

30

IC/IB = 10

= 2 V

BE(off)

= 0

BE(off)

200 300 500

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

0.1
10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100

70
50

30

20

, RISE TIME (ns)

r

t

10

7.0

5.0
10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

VCC = 30 V
IC/IB = 10

Q

T

Q

A

200

300 500

VCC = 30 V
IC/IB = 10

200 300 500

Figure 5. Turn–On Time

200

100

70

50

IB1 = I

, STORAGE TIME (ns)

′

s

t

30

20

10 20 50 70 100

B2

t

′

= ts – 1/8 t

s

f

30

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC/IB = 20

IC/IB = 10

200 300

Figure 6. Rise Time

500

3