MOTOROLA MMBT4401LT1, MMBT4401LT3 Datasheet



SEMICONDUCTOR TECHNICAL DATA

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation

Alumina Substrate,

Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBT4401LT1 = 2X

CEO CBO EBO

P

R

P

R

C

D

q

JA D

q

JA

stg

COLLECTOR

3

1

BASE

2

EMITTER

40 Vdc 60 Vdc

6.0 Vdc

600 mAdc

225

1.8 556 °C/W 300

2.4 417 °C/W

–55 to +150 °C

mW

mW/°C

mW

mW/°C



Motorola Preferred Device

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

(3)

Symbol Min Max Unit

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BEV

I

CEX

40 —

60 —

6.0 —

— 0.1

Vdc

µAdc

1

MMBT4401LT1

(

CC

,

EB

,

ns

(

CC

,

C

,

ns

ELECTRICAL CHARACTERISTICS (continued) (T

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

Base–Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

(3)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time Rise Time Storage Time Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

(VCC = 30 Vdc, VEB = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

= 25°C unless otherwise noted)

A

h

FE

V

CE(sat)

V

BE(sat)

f

C

h

t t t

oe

t

T

cb

eb

ie

re

fe

d

s

Vdc

MHz

X 10

m

mhos

—

pF

kΩ

–4

—

20 40 80

100

40

— —

0.75 —

250 —

— 6.5

— 30

1.0 15

0.1 8.0

40 500

1.0 30

— 15

r

f

— 20 — 225 — 30

— — —

300

—

0.4

0.75

0.95

1.2

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V

+16 V 0

–2.0 V

1.0 to 100 DUTY CYCLE

< 2.0 ns

µ

s,

1.0 k

≈

2.0%

200

Ω

CS* < 10 pF

Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

0

–14 V

1.0 to 100 DUTY CYCLE

< 20 ns

µ

s,

1.0 k

≈

2.0%

Ω

–4.0 V

Figure 1. T urn–On Time Figure 2. T urn–Off Time

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

+30 V

200

Ω

CS* < 10 pF

TRANSIENT CHARACTERISTICS

25

°

C 100°C

MMBT4401LT1

30

20

C

10

7.0

5.0

CAPACITANCE (pF)

3.0

2.0

0.1 2.0 5.0 10 REVERSE VOL TAGE (VOLTS)

3.01.00.50.30.2

Figure 3. Capacitances

100

70 50

30

20

t, TIME (ns)

obo

IC/IB = 10

tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0

20

C

cb

30 50

10

7.0 VCC = 30 V

5.0

IC/IB = 10

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

0.1

10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100

70 50

30

20

t, TIME (ns)t

t

r

t

f

Q

T

Q

A

200

300 500

VCC = 30 V IC/IB = 10

10

7.0

5.0 10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

300

200

100

70

, STORAGE TIME (ns)

′

s

t

50

30

10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

200 300 500

ts′

= ts – 1/8 t IB1 = I IC/IB = 10 to 20

f

B2

200 300

500

10

7.0

5.0 10 20 50 70 100

30

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise and Fall Times

100

70 50

30 20

, FALL TIME (ns)

f

10

7.0

5.0 10 20 50 70 100

IC/IB = 10

30

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC/IB = 20

200 300 500

VCC = 30 V IB1 = I

B2

200 300

500

Motorola Small–Signal Transistors, FETs and Diodes Device Data

3