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SEMICONDUCTOR TECHNICAL DATA
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by MMBT4401LT1/D
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBT4401LT1 = 2X
CEO
CBO
EBO
P
R
P
R
C
D
q
JA
D
q
JA
stg
COLLECTOR
3
1
BASE
2
EMITTER
40 Vdc
60 Vdc
6.0 Vdc
600 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
(3)
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
40 —
60 —
6.0 —
— 0.1
— 0.1
Vdc
Vdc
Vdc
µAdc
µAdc
1
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MMBT4401LT1
ELECTRICAL CHARACTERISTICS (continued) (T
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
(3)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
= 25°C unless otherwise noted)
A
h
FE
V
CE(sat)
V
BE(sat)
f
C
C
h
h
h
h
t
t
t
oe
t
T
cb
eb
ie
re
fe
d
s
Vdc
Vdc
MHz
X 10
m
mhos
—
pF
pF
kΩ
–4
—
20
40
80
100
40
—
—
0.75
—
250 —
— 6.5
— 30
1.0 15
0.1 8.0
40 500
1.0 30
— 15
r
f
— 20
— 225
— 30
—
—
—
300
—
0.4
0.75
0.95
1.2
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+16 V
0
–2.0 V
1.0 to 100
DUTY CYCLE
< 2.0 ns
µ
s,
1.0 k
≈
2.0%
200
Ω
Ω
CS* < 10 pF
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
0
–14 V
1.0 to 100
DUTY CYCLE
< 20 ns
µ
s,
1.0 k
≈
2.0%
Ω
–4.0 V
Figure 1. T urn–On Time Figure 2. T urn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
+30 V
200
Ω
CS* < 10 pF
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TRANSIENT CHARACTERISTICS
25
°
C 100°C
MMBT4401LT1
30
20
C
10
7.0
5.0
CAPACITANCE (pF)
3.0
2.0
0.1 2.0 5.0 10
REVERSE VOL TAGE (VOLTS)
3.01.00.50.30.2
Figure 3. Capacitances
100
70
50
30
20
t, TIME (ns)
obo
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
20
C
cb
30 50
10
7.0
VCC = 30 V
5.0
IC/IB = 10
3.0
2.0
1.0
0.7
0.5
Q, CHARGE (nC)
0.3
0.2
0.1
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100
70
50
30
20
t, TIME (ns)t
t
r
t
f
Q
T
Q
A
200
300 500
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
300
200
100
70
, STORAGE TIME (ns)
′
s
t
50
30
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
200 300 500
ts′
= ts – 1/8 t
IB1 = I
IC/IB = 10 to 20
f
B2
200 300
500
10
7.0
5.0
10 20 50 70 100
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise and Fall Times
100
70
50
30
20
, FALL TIME (ns)
f
10
7.0
5.0
10 20 50 70 100
IC/IB = 10
30
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC/IB = 20
200 300 500
VCC = 30 V
IB1 = I
B2
200 300
500
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3