Motorola MMBT3906LT1, MMBT3906LT3 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–40 Vdc
Collector–Base Voltage V
CBO
–40 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(3)
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–40 —
Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V
(BR)CBO
–40 —
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V
(BR)EBO
–5.0 —
Vdc
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
I
BL
— –50
nAdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
I
CEX
— –50
nAdc
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT3906LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola Preferred Device
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
MMBT3906LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(3)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
H
FE
60
80
100
60
30
—
—
300
—
—
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
V
CE(sat)
—
—
–0.25
–0.4
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
V
BE(sat)
–0.65
—
–0.85
–0.95
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
f
T
250 —
MHz
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 4.5
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— 10
pF
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
h
ie
2.0 12
kΩ
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
h
re
0.1 10
X 10
–4
Small–Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
h
fe
100 400
—
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
h
oe
3.0 60
m
mhos
Noise Figure
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
NF
— 4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
CC
= –3.0 Vdc, VBE = 0.5 Vdc,
t
d
— 35
Rise Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc)
t
r
— 35
ns
Storage Time
CC
= –3.0 Vdc, IC = –10 mAdc,
t
s
— 225
Fall Time
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
t
f
— 75
ns
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t1 < 500
m
s
* T otal shunt capacitance of test jig and connectors
(V
(V
MMBT3906LT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
TJ = 25°C
TJ = 125
°
C
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
705100
5.0 7.0
30 50
200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = I
B2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
500
300
200
100
70
50
TIME (ns)
705100
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
1.0 2.0 3.0 10 20
5.0 7.0
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
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