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SEMICONDUCTOR TECHNICAL DATA
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by MMBT3904LT1/D
NPN Silicon
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBT3904LT1 = 1AM
CEO
CBO
EBO
P
R
P
R
C
D
q
JA
D
q
JA
stg
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
1
COLLECTOR
3
2
EMITTER
mW
mW/°C
mW
mW/°C
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40 — Vdc
60 — Vdc
6.0 — Vdc
— 50 nAdc
— 50 nAdc
1
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MMBT3904LT1
ELECTRICAL CHARACTERISTICS (T
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(3)
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
(VCC = 3.0 Vdc, VBE = –0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
H
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF — 5.0 dB
t
d
t
r
t
s
t
f
40
70
100
60
30
—
—
0.65
—
300 — MHz
— 4.0 pF
— 8.0 pF
1.0 10 k ohms
0.5 8.0 X 10
100 400 —
1.0 40
— 35
— 35
— 200
— 50
—
—
300
—
—
0.2
0.3
0.85
0.95
Vdc
Vdc
m
mhos
—
–4
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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DUTY CYCLE = 2%
300 ns
+10.9 V
+3 V
275
10 < t1 < 500
DUTY CYCLE = 2%
m
s
MMBT3904LT1
t
1
+10.9 V
+3 V
275
–0.5 V
10
7.0
5.0
3.0
CAPACITANCE (pF)
2.0
1.0
0.1
10 k
< 1 ns
Figure 1. Delay and Rise Time
Equivalent T est Circuit
C
ibo
C
obo
0.2 0.3 0.5 0.7
1.0 2.0 3.0 5.0 7.0 10 20
REVERSE BIAS VOL TAGE (VOLTS)
0
CS < 4 pF*
′
–9.1 V
* T otal shunt capacitance of test jig and connectors
< 1 ns
Figure 2. Storage and Fall Time
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125
°
C
5000
VCC = 40 V
3000
IC/IB = 10
2000
1000
700
500
300
Q, CHARGE (pC)
200
100
70
30 40
50
1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
10 k
1N916
Equivalent T est Circuit
Q
T
CS < 4 pF*
Q
A
Figure 3. Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 4. Charge Data
3