Motorola MMBT3904LT1, MMBT3904LT3 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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NPN Silicon

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBT3904LT1 = 1AM

CEO
CBO
EBO

P

R

P

R

C

D

q

JA
D

q

JA

stg

40 Vdc
60 Vdc

6.0 Vdc

200 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

1

COLLECTOR

3

2

EMITTER

mW

mW/°C

mW

mW/°C



Motorola Preferred Device

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

40 — Vdc

60 — Vdc

6.0 — Vdc

— 50 nAdc

— 50 nAdc

1

MMBT3904LT1

(

CC

,

BE

,

ns

(

CC

,

ns

ELECTRICAL CHARACTERISTICS (T

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

Base–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

(3)

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

(VCC = 3.0 Vdc, VBE = –0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

H

FE

V

CE(sat)

V

BE(sat)

f

T

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

NF — 5.0 dB

t

d

t

r

t

s

t

f

40
70

100

60
30

—
—

0.65
—

300 — MHz

— 4.0 pF

— 8.0 pF

1.0 10 k ohms

0.5 8.0 X 10

100 400 —

1.0 40

— 35
— 35
— 200
— 50

—
—

300

—
—

0.2

0.3

0.85

0.95

Vdc

Vdc

m

mhos

—

–4

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

DUTY CYCLE = 2%

300 ns

+10.9 V

+3 V

275

10 < t1 < 500
DUTY CYCLE = 2%

m

s

MMBT3904LT1

t

1

+10.9 V

+3 V

275

–0.5 V

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

10 k

< 1 ns

Figure 1. Delay and Rise Time

Equivalent T est Circuit

C

ibo

C

obo

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOL TAGE (VOLTS)

0

CS < 4 pF*

′

–9.1 V

* T otal shunt capacitance of test jig and connectors

< 1 ns

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125

°

C

5000

VCC = 40 V

3000

IC/IB = 10

2000

1000

700
500

300

Q, CHARGE (pC)

200

100

70

30 40

50

1.0

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

10 k

1N916

Equivalent T est Circuit

Q

T

CS < 4 pF*

Q

A

Figure 3. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Charge Data

3