Motorola MMBT3416LT3 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MMBT3416LT3/D
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBT3416LT3 = GP
CEO
EBO
P
R
P
R
C
D
q
JA
D
q
JA
stg
40 Vdc
4.0 Vdc
100 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
1
BASE
COLLECTOR
3
2
EMITTER
mW
mW/°C
mW
mW/°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1998
Symbol Min Max Unit
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
EBO
40 — Vdc
4.0 — Vdc
— 100 nAdc
— 100 nAdc
1
MMBT3416LT3
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 4.5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Collector Cutoff Current
(VCB = 18 Vdc, TA = 100°C)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)
= 25°C unless otherwise noted) (Continued)
A
h
FE
V
CE(sat)
V
BE(sat)
I
CBO2
h
FE
75 225 —
— 0.3 Vdc
0.6 1.3 Vdc
— 15 µAdc
75 — —
DUTY CYCLE = 2%
300 ns
–0.5 V
<1.0 ns
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+10.9 V
+3.0 V
275
10 k
CS < 4.0 pF*
*Total shunt capacitance of test jig and connectors
10 < t1 < 500 µs
DUTY CYCLE = 2%
Figure 1. T urn–On Time Figure 2. T urn–Off Time
0
–9.1 V
t
1
+10.9 V
10 k
<1.0 ns
1N916
+3.0 V
275
CS < 4.0 pF*
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
MMBT3416LT3
20
IC = 1.0 mA
10
7.0
5.0
, NOISE VOLTAGE (nV)
n
e
10 µA
3.0
2.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k
300 µA
100 µA
30 µA
f, FREQUENCY (Hz)
BANDWIDTH = 1.0 Hz
RS = 0
Figure 3. Noise V oltage
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
, SOURCE RESISTANCE (OHMS)
S
R
200
100
50
10
2.0 dB
3.0 dB
4.0 dB
20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
6.0 dB
10 dB
100
BANDWIDTH = 1.0 Hz
RS
100 µA
, NOISE CURRENT (pA)
n
I
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
IC = 1.0 mA
300 µA
30 µA
10 µA
10 20 50 100 200 500 1 k 2 k 5 k 10 k
f, FREQUENCY (Hz)
Figure 4. Noise Current
1M
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
, SOURCE RESISTANCE (OHMS)
S
500
R
200
100
1.0 dB
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB
≈∞
5.0 dB
8.0 dB
Figure 5. Narrow Band, 100 Hz
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
, SOURCE RESISTANCE (OHMS)
S
200
R
100
50
10
1.0 dB
20 30 50 70 100 200 300 500 700 1 k
IC, COLLECTOR CURRENT (µA)
10 Hz to 15.7 kHz
2.0 dB
3.0 dB
5.0 dB
8.0 dB
Figure 7. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 6. Narrow Band, 1.0 kHz
Noise Figure is defined as:
2
2
–23
R
S
j/°K)
Ǔ
1ń2
2
e
)
NF+20 log
e
= Noise Voltage of the Transistor referred to the input. (Figure 3)
n
I
= Noise Current of the Transistor referred to the input. (Figure 4)
n
K
= Boltzman’s Constant (1.38 x 10
T
= Temperature of the Source Resistance (°K)
R
= Source Resistance (Ohms)
S
10
ǒ
4KTRS)
n
4KTR
I
n
S
3
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