Motorola MMBT2907AWT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications.
COLLECTOR
3
Order this document
by MMBT2907AWT1/D
Motorola Preferred Device
3
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
P
D
R
q
JA
stg
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, V
Collector Cutoff Current
(VCE = –30 Vdc, V
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
EB(off)
EB(off)
= –0.5 Vdc)
= –0.5 Vdc)
(2)
1
BASE
EMITTER
–60 Vdc
–60 Vdc
–5.0 Vdc
–600 mAdc
150 mW
833 °C/W
–55 to +150 °C
1
2
2
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
CASE 419–02, STYLE 3
SOT–323/SC–70
–60 — Vdc
–60 — Vdc
–5.0 — Vdc
— –50 nAdc
— –50 nAdc
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MMBT2907AWT1
)
I
C
150 mAdc, I
B1
mAdc)
ns
)
I
B1
I
B2
mAdc)
ELECTRICAL CHARACTERISTICS (T
ON CHARACTERISTICS
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base–Emitter Saturation Voltage
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
(1)
(1)
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
(1)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
Rise Time
Storage Time
Fall Time
Turn–Off Time
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
(VCC = –30 Vdc,
I
= –150 mAdc, I
=
(VCC = –6.0 Vdc, IC = –150 mAdc,
I
= I
=
= 15 mAdc
= 15
= –15 mAdc
= 15
H
V
CE(sat)
V
BE(sat)
f
C
obo
C
t
on
t
t
t
off
FE
T
ibo
d
t
r
s
t
f
75
100
100
100
50
—
—
—
—
200 — MHz
— 8.0 pF
— 30 pF
— 45
— 10
— 40
— 80
— 30
— 100
—
—
—
—
—
–0.4
–1.6
–1.3
–2.6
—
Vdc
Vdc
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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