MOTOROLA MMBT2484LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MMBT2484LT1/D
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBT2484LT1 = 1U
CEO
CBO
EBO
P
R
P
R
C
D
q
JA
D
q
JA
stg
COLLECTOR
3
1
BASE
2
EMITTER
60 Vdc
60 Vdc
6.0 Vdc
50 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
(VCB = 45 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
60 —
60 —
5.0 —
—
—
— 10
10
10
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
MMBT2484LT1
ELECTRICAL CHARACTERISTICS (continued) (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted)
A
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz, BW = 200 Hz)
h
FE
V
CE(sat)
V
BE(on)
C
obo
C
ibo
NF
250
—
— 0.35
— 0.95
— 6.0
— 6.0
— 3.0
800
—
—
Vdc
Vdc
pF
pF
dB
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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