Motorola MMBR951LT1, MRF957T1, MRF9511LT1, MMBR951ALT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
$ ! #%
!!" !
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
• Fully Implanted Base and Emitter Structure
• 18 Finger, 1.25 Micron Geometry with Gold Top Metal
• Gold Sintered Back Metal
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR951ALT1/D
IC = 100 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR951L T1, MMBR951ALT1
CASE 419–02, STYLE 3
MRF957T1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF9511LT1
REV 9
Motorola, Inc. 1997
MMBR951 MRF957 MRF9511 SERIESMOTOROLA RF DEVICE DATA
1
MAXIMUM RATINGS
Rating Symbol MMBR951LT1
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Power Dissipation (1) TC = 75°C
Derate linearly above T
Collector Current — Continuous (2) I
Maximum Junction Temperature T
Storage Temperature T
Thermal Resistance, Junction to Case R
case
= 75°C @
P
D(max)
CEO
CBO
EBO
C
Jmax
stg
θJC
MMBR951ALT1
10 10 10 Vdc
20 20 20 Vdc
1.5 1.5 15 Vdc
0.322
4.29
100 100 100 mA
150 150 150 °C
–55 to +150 –55 to +150 –55 to +150 °C
233 233 330 °C/W
MRF9511LT1 MRF957T1 Unit
0.322
4.29
DEVICE MARKING
MRF951 1LT1 = 11 MMBR951ALT1 = AAG MMBR951LT1 = 7Z MRF957T1 = B
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown V oltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V
(BR)CEO
V
(BR)CBO
I
EBO
I
CBO
0.227
3.03
10 13 — Vdc
20 25 — Vdc
— — 0.1 µAdc
— — 0.1 µAdc
Watts
mW/°C
ON CHARACTERISTICS (3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA) All
(VCE = 6.0 V, IC = 5.0 mA) MMBR951ALT1
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz) MRF9511LT1, MMBR951LT1, MMBR951ALT1
NOTES:
1. T o calculate the junction temperature use TJ = (PD x R
to body of package.
2. IC — Continuous (MTBF ≈ 10 years).
3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.
MRF957T1
θJA
) + T
. Case temperature measured on collector lead immediately adjacent
CASE
h
FE
C
cb
f
T
5075——200
150
— 0.45 1.0 pF
——8.0
9.0——
—
GHz
MMBR951 MRF957 MRF9511 SERIES
2
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
y
Conditions Symbol
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GU
max
=
(1
–
|S11|2)(1–|S
G
NF
|S
|S21|
NF
21
2
Umax
MIN
G
NF
50 Ω
2
|
MRF9511LT1
Min Typ Max Min Typ Max Min Typ Max
—
14.5
—
—
—
—
10.5
—
—
—
—
—
—
—
— 1.9 2.8 — 1.9 2.8 — 1.9 2.8 dB
|2)
22
9.0
—
17
—
1.3
2.1
—
14
9.0
—
—
—
—
—
—
—
—
—
—
—
—
—
MMBR951LT1
MMBR951ALT1
—
12.5
—
7.0
—
—
—
14
—
8.0
—
—
—
1.3
—
2.1
—
—
—
13
—
7.5
—
—
MRF957T1
—
—
—
—
—
—
—
—
—
—
—
—
—
13.3
—
—
—
10.1
—
14
—
—
—
10.8
—
1.5
—
—
—
2.0
—
11.8
—
—
—
9.0
Unit
dB
—
—
—
dB
—
—
—
dB
—
—
—
dB
—
—
—
MMBR951 MRF957 MRF9511 SERIESMOTOROLA RF DEVICE DATA
3
10
TYPICAL CHARACTERISTICS
MMBR951LT1, MMBR951AL T1, MRF9511LT1
5
2
1
, CAPACITANCE (pF)
0.5
CB
C
0.2
0.1
2
VCB, REVERSE VOLTAGE (V)
Figure 1. Collector–Base Capacitance
versus V oltage
12
10
8
6
4
2
, GAIN BANDWIDTH PRODUCT (GHz)
T
f
0
1235107 20 1007030
IC, COLLECTOR CURRENT (mA)
VCE = 8 V
200
100
, DC CURRENT GAIN
50
FE
h
20
10
1 2 3 5 10 20 100501 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain versus
Collector Current
16
14
12
MRF9511LT1
10
, INSERTION GAIN (dB)
8
2
|
21
|S
6
4
1235107 20 100705030
MMBR951LT1
IC, COLLECTOR CURRENT (mA)
VCE = 8 Vf = 1 MHz
VCE = 8 V
f = 1 GHz
Figure 3. Gain Bandwidth Product versus
Collector Current
MMBR951 MRF957 MRF9511 SERIES
4
Figure 4. Insertion Gain versus Collector Current
MOTOROLA RF DEVICE DATA
TYPICAL FORW ARD INSERTION GAIN AND
MAXIMUM UNILA TERAL GAIN versus FREQUENCY
30
25
20
15
, INSERTION GAIN (dB)
10
2
|
21
, MAXIMUM UNILATERAL GAIN (dB)
|S
5
max
GU
0
0.1 0.2 0.3 0.5 10.7 2 53
f, FREQUENCY (GHz)
|S21|
GU
max
2
Figure 5. MRF9511LT1 Figure 6. MMBR951L T1
24
20
16
12
8
, ASSOCIATED GAIN AT MINIMUM (dB)
4
NF
G
0
0.1 0.2 0.3 0.5 10.7 2 53
MMBR951LT1
CIRCUIT — FIGURE 9
f, FREQUENCY, (GHz)
MRF9511LT1
NF
50
Figure 7. T ypical Noise Figure and Associated
Gain versus Frequency
MRF9511LT1
VCE = 8 V
IC = 30 mA
G
NF
Ω
NF
VCE = 6 V
IC = 5 mA
min
30
25
20
15
, INSERTION GAIN (dB)
10
2
|
21
, MAXIMUM UNILATERAL GAIN (dB)
|S
5
max
GU
0
0.1 0.2 0.3 0.5 10.7 2 53
6
5
4
CIRCUIT — FIGURE 9
6
5
4
3
2
1
0
3
2
NF, NOISE FIGURE (dB)
1
NF, NOISE FIGURE (dB)
0
1235 107205030
MMBR951L T1
VCE = 8 V
IC = 30 mA
GU
max
2
|S21|
f, FREQUENCY (GHz)
MRF9511LT1
MMBR951L T1
VCE = 6 V
NF
at 2 GHz
min
NF
at 1 GHz
min
IC, COLLECTOR CURRENT (mA)
Figure 8. T ypical Noise Figure versus
Collector Current
RF INPUT
V
BE
D.U.T.
**SLUG TUNER
NETWORK
**SLUG TUNER*BIAS
Figure 9. Functional Circuit Schematic (All Devices)
VCE = 6 Vdc
*BIAS
NETWORK
MMBR951 MRF957 MRF9511 SERIESMOTOROLA RF DEVICE DATA
RF OUTPUT
*HP11590B
**MICROLAB/FXR
**SF – 11N < 1 GHz
**SF – 31IN
≥
1 GHz
5
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