Motorola MMBR947BT1, MMBR941T3, MMBR941LT3, MMBR941BLT1, MMBR947AT1 Datasheet

2–1

MMBR941 MRF947 MRF9411 SERIESMOTOROLA RF DEVICE DATA

The RF Line

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Designed for use in high gain, low noise small–signal amplifiers. This series

features excellent broadband linearity and is offered in a variety of packages.

• Fully Implanted Base and Emitter Structure

• 9 Finger, 1.25 Micron Geometry with Gold Top Metal

• Gold Sintered Back Metal

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel

Order this document

by MMBR941LT1/D



SEMICONDUCTOR TECHNICAL DATA









IC = 50 mA

LOW NOISE

HIGH–FREQUENCY

TRANSISTORS

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE

MMBR941L T1, T3, MMBR941BLT1

CASE 318A–05, STYLE 1

SOT–143

LOW PROFILE

MRF9411LT1

CASE 419–02, STYLE 3

MRF947AT1, MRF947BT1,

MRF947T1, T3

 Motorola, Inc. 1997

REV 9

MMBR941 MRF947 MRF9411 SERIES
2–2

MOTOROLA RF DEVICE DATA

MAXIMUM RATINGS

Rating Symbol MMBR941L T1, T3 MRF9411LT1 MRF947 Series Unit

Collector–Emitter Voltage V

CEO

10 10 10 Vdc

Collector–Base Voltage V

CBO

20 20 20 Vdc

Emitter–Base Voltage V

EBO

1.5 1.5 1.5 Vdc

Power Dissipation (1) TC = 75°C

Derate linearly above T

case

= 75°C @

P

Dmax

0.25

3.33

0.25

3.33

0.188

2.5

Watts

mW/°C

Collector Current — Continuous (2) I

C

50 50 50 mA

Maximum Junction Temperature T

Jmax

150 150 150 °C

Storage Temperature T

stg

–55 to +150 –55 to +150 –55 to +150 °C

Thermal Resistance,

Junction to Case

R

θJC

300 300 400 °C/W

DEVICE MARKING

MMBR941L T1 = 7Y MMBR941BL T1 = 7N MRF947T1, T3 = A MRF947BT1 = H
MRF9411LT1 = 10 MRF947A T1 = G

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (3)

Collector–Emitter Breakdown V oltage

(IC = 0.1 mA, IB = 0) All

V

(BR)CEO

10 12 — Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0) All

V

(BR)CBO

20 23 — Vdc

Emitter Cutoff Current

(VEB = 1.0 V , IC = 0) All

I

EBO

— — 0.1 µAdc

Collector Cutoff Current

(VCB = 10 V, IE = 0) All

I

CBO

— — 0.1 µAdc

ON CHARACTERISTICS (3)

DC Current Gain

(VCE = 6.0 V , IC = 5.0 mA) (MMBR941L T1, MRF9411LT1)

(MMBR941BL T1)

h

FE

50

100

—
—

200
200

—

DC Current Gain (VCE = 1.0 V , IC = 500 µA) MRF947T1, MRF947BT1

h

FE

1

50 — — —

DC Current Gain

(VCE = 6.0 V , IC = 5.0 mA) MRF947T1, T3

MRF947A T1
MRF947BT1

h

FE

2

h

FE

3

h

FE

4

50
75

100

—
—
—

—
150
200

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz) All

C

cb

— 0.35 — pF

Current Gain — Bandwidth Product

(VCE = 6.0 V , IC = 15 mA, f = 1.0 GHz) All

f

T

— 8.0 — GHz

NOTE:

1. T o calculate the junction temperature use TJ = PD x R

θJC

+ T

CASE

. Case temperature measured on collector lead immediately adjacent to

body of package.

2. IC — Continuous (MTBF ≈ 10 years).

3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.

2–3

MMBR941 MRF947 MRF9411 SERIESMOTOROLA RF DEVICE DATA

PERFORMANCE CHARACTERISTICS

MRF9411LT1 MMBR941LT1, T3 MRF947 Series

Conditions

Symbol

Min Typ Max Min Typ Max Min Typ Max

Unit

Insertion Gain

(VCE = 6.0 V , IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V , IC = 15 mA, f = 2.0 GHz)

|S21|

2

——1610————14

8.0————1410.8——

dB

Maximum Unilateral Gain (1)

(VCE = 6.0 V , IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V , IC = 15 mA, f = 2.0 GHz)

G

Umax

——1812————1610————14.8

11.6——

dB

Noise Figure — Minimum (Figure 9)

(VCE = 6.0 V , IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V , IC = 5.0 mA, f = 2.0 GHz)

NF

MIN

——1.5

2.1————

1.5

2.1————

1.5

2.1——

dB

Associated Gain at Minimum NF (Figure 9)

(VCE = 6.0 V , IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V , IC = 5.0 mA, f = 2.0 GHz)

G

NF

——15

9.5————148.5————1410——

dB

Noise Figure — 50 ohm Source

(VCE = 6.0 V , IC = 5.0 mA, f = 1.0 GHz)

NF

50 Ω

— 1.9 2.8 — 1.9 2.8 — 1.9 2.8 dB

NOTE:

1. Maximum Unilateral Gain is GU

max

=

|S

21

|

2

, INSERTION GAIN (dB)

Figure 1. Collector–Base Capacitance

versus Voltage

Figure 2. DC Current Gain versus

Collector Current

Figure 3. Gain Bandwidth Product versus

Collector Current

Figure 4. Insertion Gain versus Collector Current

TYPICAL CHARACTERISTICS

MMBR941LT1, T3; MMBR941BLT1; MRF9411LT1; MRF9411BLT1

IC, COLLECTOR CURRENT (mA)

VCE = 6 V

f = 1 GHz

24

20

16

12

8

4

0

1235107 20 100705030

VCE = 6 V

VCE = 6 V
f = 1 GHz

IC, COLLECTOR CURRENT (mA)

12

10

8

6

4

2

0

1235107 20 100705030

IC, COLLECTOR CURRENT (mA)

200
100

70
50

30
20

10

1235107 20 100705030

300

1235710

1

0.7

0.5

0.1

0.2

0.3

MRF9411LT1

f

T

, GAIN BANDWIDTH PRODUCT (GHz)

h

FE

, DC CURRENT GAIN

C

CB

, CAPACITANCE (pF)

VCB, REVERSE VOLTAGE (V)

MMBR941LT1, T3

f = 1 MHz

|S

21

|

2

(1

–

|S11|2)(1–|S

22

|2)

MMBR941 MRF947 MRF9411 SERIES
2–4

MOTOROLA RF DEVICE DATA

|S

21

|

2

, INSERTION GAIN (dB)

|S

21

|

2

, INSERTION GAIN (dB)

Figure 5. MMBR941LT1, T3 Figure 6. MRF9411LT1

Figure 7. Noise Figure and Associated Gain

versus Frequency

Figure 8. Minimum Noise Figure versus

Collector Current

FORWARD INSERTION GAIN AND

MAXIMUM UNILA TERAL GAIN versus FREQUENCY

Figure 9. Functional Circuit Schematic (all devices)

30

25

20

15

10

5

0

0.1 0.2 0.3 0.5 10.7 2 10753
f, FREQUENCY, (GHz)

IC, COLLECTOR CURRENT (mA)

IC = 15 mA
VCE = 6 V

VCE = 6 V
IC = 5 mA

VCE = 6 V

|S21|

2

GU

max

NF

min

NF

min

@ 2 GHz

|S21|

2

GU

max

GU

max

, MAXIMUM UNILATERAL GAIN (dB)

MRF9411LT1

NF

50

Ω

V

BE

V

CE

DUT

RF INPUT

RF OUTPUT

*SLUG TUNER

*SLUG TUNERBIAS

NETWORK

BIAS

NETWORK

*MICROLAB/FXR

**SF – 11N < 1 GHz
**SF – 31IN

≥

1 GHz

0

1

2

3

4

5

6

30

25

20

15

10

5

0

0.1 0.2 0.3 0.5 10.7 2 10753
f, FREQUENCY, (GHz)

24

20

16

12

8

4

0

0.1 0.2 0.3 0.5 10.7 2 10753
f, FREQUENCY, (GHz)

6

5

4

3

2

1

0

1235 107 20 100705030

IC = 15 mA
VCE = 6 V

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

G

NF

, ASSOCIATED GAIN (dB)

GU

max

, MAXIMUM UNILATERAL GAIN (dB)

CIRCUIT — FIGURE 9

MMBR941LT1, T3
MRF947

NF

min

@ 1 GHz

2–5

MMBR941 MRF947 MRF9411 SERIESMOTOROLA RF DEVICE DATA

12 5 203010

1

0.1

0.2

0.5

REVERSE VOL TAGE (V)

C, CAPACITANCE (pF)

Figure 10. Capacitance versus Voltage

0.1 0.5 1 10520230

150
130

110

50

70

90

IC, COLLECTOR CURRENT (mA)

h , DC CURRENT GAIN

FE

Figure 11. DC Current Gain versus Collector Current

TYPICAL CHARACTERISTICS

MRF947 SERIES

C

ob

C

cb

2012 3010

8

6

4

0

2

5

f

T

IC, COLLECTOR CURRENT (mA)

Figure 12. Gain–Bandwidth Product

versus Collector Current

34 15

2012 3010

15

13

11

9

5

7

5

G

NF

IC, COLLECTOR CURRENT (mA)

Figure 13. Associated Gain and Minimum

Noise Figure versus Collector Current

5

4

3

2

0

1

N

F

(dB)

0.2 0.3 0.5 1 325

32
28
24
20
16

0

4

12

8

0.1
f, FREQUENCY (GHz)

GAIN (dB)

Figure 14. Forward Insertion Gain and Maximum

Stable/Available Power Gain versus Frequency

, GAIN BANDWIDTH PRODUCT (GHz)

, ASSOCIATED GAIN (dB)

VCE = 6 V
IC = 5 mA

ť

S21

ť

2

N

F

VCE = 6 V

G

NF

MSG

f = 1 GHz

VCE = 6 V

MSG

MAG

MMBR941 MRF947 MRF9411 SERIES
2–6

MOTOROLA RF DEVICE DATA

V

I

f

S

11

S

21

S

12

S

22

V

CE

(Volts)

I

C

(mA)

f

(MHz)

Mag ∠ φ Mag ∠ φ Mag ∠ φ Mag ∠ φ

1.0

0.5 100
200
500
900

1000
1500
2000
3000

0.97

0.96

0.90

0.75

0.72

0.63

0.57

0.55

–11
–22
–53
–89
–98
–132
–163

–144

1.78

1.74

1.60

1.37

1.32

1.07

0.89

0.67

170
161
133
105
100

74
55
30

0.03

0.06

0.13

0.18

0.18

0.19

0.16

0.15

83
76
56
37
33
20
15
40

0.99

0.99

0.93

0.83

0.82

0.75

0.72

0.71

–4.7
–9.1

–21
–33
–36
–47
–57
–76

1.0 100
200
500
900

1000
1500
2000
3000

0.95

0.93

0.81

0.63

0.60

0.51

0.46

0.46

–13
–27
–62
–101
–110
–144
–173

–138

3.37

3.27

2.85

2.21

2.08

1.59

1.28

0.95

169
158
128
101

96
73
56
30

0.03

0.06

0.12

0.15

0.15

0.16

0.16

0.19

81
73
52
37
34
27
29
44

0.99

0.98

0.86

0.73

0.71

0.64

0.61

0.60

–6.2

–12
–26
–38
–40
–49
–58
–75

6.0

5.0 100
200
400
600
800

1000
1500
2000
2500
3000
3500
4000

0.82

0.75

0.55

0.42

0.33

0.28

0.25

0.16

0.21

0.18

0.30

0.29

–25
–47
–79
–98
–114
–129
–155

176
151
122
108
91

14.6

12.6

9.2

6.9

5.3

4.5

3.1

2.4

2.0

1.7

1.5

1.4

159
142
120
106

97
90
77
66
57
50
42
37

0.02

0.04

0.05

0.07

0.08

0.09

0.13

0.16

0.20

0.23

0.27

0.32

77
68
61
60
61
62
67
68
69
68
66
64

0.94

0.85

0.69

0.60

0.56

0.52

0.51

0.51

0.48

0.48

0.45

0.42

–13
–22
–31
–32
–33
–33
–37
–36
–40
–44
–46
–53

10 100

200
400
600
800

1000
1500
2000
2500
3000
3500
4000

0.67

0.54

0.37

0.26

0.21

0.18

0.18

0.11

0.17

0.15

0.27

0.26

–37
–64
–96
–114
–130
–147
–167

159
140
107
100
85

23.5

18.1

11.3

8.0

6.0

5.1

3.4

2.6

2.2

1.8

1.7

1.5

149
129
108

98
91
85
74
64
56
59
42
37

0.02

0.03

0.05

0.06

0.08

0.09

0.13

0.17

0.21

0.25

0.28

0.33

74
68
67
67
70
70
72
71
69
67
65
61

0.88

0.73

0.56

0.50

0.47

0.45

0.46

0.46

0.44

0.45

0.42

0.39

–18
–28
–31
–30
–30
–30
–34
–34
–38
–41
–42
–49

15 100

200
400
600
800

1000
1500
2000
2500
3000
3500
4000

0.56

0.43

0.29

0.22

0.18

0.16

0.17

0.11

0.17

0.15

0.28

0.25

–46
–75
–107
–125
–141
–158
–174

150
138
102
98
82

28.6

20.2

11.8

8.2

6.2

5.1

3.4

2.6

2.2

1.9

1.7

1.5

143
122
104

95
88
83
72
63
55
49
42
37

0.02

0.03

0.04

0.06

0.08

0.09

0.13

0.17

0.21

0.25

0.29

0.32

73
67
70
74
74
74
73
72
70
67
65
61

0.83

0.65

0.50

0.46

0.45

0.43

0.44

0.45

0.43

0.44

0.40

0.38

–22
–30
–30
–28
–27
–28
–32
–33
–37
–39
–41
–47

Table 1. MMBR941LT1, T3 Common Emitter S–Parameters