Motorola MMBD914LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD914LT1/D
3
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBD914LT1 = 5D
R
F
P
D
R
q
JA
P
D
R
q
JA
stg
100 Vdc
200 mAdc
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
ANODE
mW
mW/°C
mW
mW/°C
1
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
V
(BR)
I
R
C
T
V
F
t
rr
100 — Vdc
—
—
— 4.0 pF
— 1.0 Vdc
— 4.0 ns
25
5.0
nAdc
m
Adc
1
MMBD914LT1
820
Ω
+10 V
0.1 µF
2.0 k
100
I
t
t
r
0.1
µ
I
F
µ
H
F
p
10%
t
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERATOR
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
DUT
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
TA = 25°C
VF, FORWARD VOLTAGE (VOLTS)
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
TA = –40°C
1.0 1.20.2 0.4 0.6 0.8
V
R
is equal to 10 mA.
R(peak)
m
, REVERSE CURRENT ( A)
R
I
0.001
90%
INPUT SIGNAL
10
1.0
0.1
0.01
0
i
= 1.0 mA
I
R
(IF = IR = 10 mA; MEASURED
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40 50
VR, REVERSE VOLTAGE (VOLTS)
R(REC)
OUTPUT PULSE
at i
R(REC)
= 1.0 mA)
Figure 2. Forward Voltage
0.68
0.64
0.60
0.56
, DIODE CAPACITANCE (pF)
D
C
0.52
0
Figure 3. Leakage Current
2.0 4.0 6.0 8.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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