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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD7000LT1/D
Motorola Preferred Device
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBD7000LT1 = M5C
1
ANODE
R
F
P
D
R
q
JA
P
D
R
q
JA
stg
–55 to +150 °C
3
CATHODE/ANODE
100 Vdc
200 mAdc
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
2
CATHODE
mW
mW/°C
mW
mW/°C
1
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
3
2
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
Capacitance (VR = 0 V) C — 1.5 pF
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
= 100 µAdc) V
(BR)
(BR)
I
R
I
R2
I
R3
V
F
t
rr
100 — Vdc
—
—
—
0.55
0.67
0.75
— 4.0 ns
1.0
3.0
100
0.7
0.82
1.1
µAdc
Vdc
1
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MMBD7000LT1
820
Ω
+10 V
0.1 µF
2.0 k
100
I
t
t
r
0.1
µ
I
F
µ
H
F
p
10%
t
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERATOR
100
10
1.0
, FORWARD CURRENT (mA)
F
I
TA = 85°C
DUT
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R
R(peak)
90%
INPUT SIGNAL
is equal to 10 mA.
I
R
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH DIODE
TA = 25°C
TA = –40°C
10
1.0
m
0.1
0.01
, REVERSE CURRENT ( A)
R
I
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
i
= 1.0 mA
R(REC)
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
0.1
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.68
0.64
0.60
0.56
, DIODE CAPACITANCE (pF)
D
C
0.52
0
0.001
1.0 1.20.2 0.4 0.6 0.8
2.0 4.0 6.0 8.0
VR, REVERSE VOLTAGE (VOLTS)
0
10 20 30 40 50
Figure 4. Capacitance
TA = 25°C
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data