Motorola MMBD7000LT1, MMBD7000LT3 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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Motorola Preferred Device

MAXIMUM RATINGS (EACH DIODE)

Rating Symbol Value Unit

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I

FM(surge)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBD7000LT1 = M5C

1

ANODE

R

F

P

D

R

q

JA

P

D

R

q

JA

stg

–55 to +150 °C

3

CATHODE/ANODE

100 Vdc
200 mAdc
500 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

2

CATHODE

mW

mW/°C

mW

mW/°C

1

CASE 318–08, STYLE 11

SOT–23 (TO–236AB)

3

2

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (EACH DIODE)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current

(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)

Forward Voltage

(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

Capacitance (VR = 0 V) C — 1.5 pF

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

= 100 µAdc) V

(BR)

(BR)

I

R

I

R2

I

R3

V

F

t

rr

100 — Vdc

—
—
—

0.55

0.67

0.75
— 4.0 ns

1.0

3.0

100

0.7

0.82

1.1

µAdc

Vdc

1

MMBD7000LT1

820

Ω

+10 V

0.1 µF

2.0 k
100

I

t

t

r

0.1

µ

I

F

µ

H

F

p

10%

t

F

t

rr

t

50 Ω OUTPUT

PULSE

GENERATOR

100

10

1.0

, FORWARD CURRENT (mA)

F

I

TA = 85°C

DUT

50

Ω

INPUT

SAMPLING

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

V

R

R(peak)

90%

INPUT SIGNAL

is equal to 10 mA.

I

R

Figure 1. Recovery Time Equivalent Test Circuit

CURVES APPLICABLE TO EACH DIODE

TA = 25°C

TA = –40°C

10

1.0

m

0.1

0.01

, REVERSE CURRENT ( A)

R

I

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

i

= 1.0 mA

R(REC)

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at i

R(REC)

= 1.0 mA)

0.1

VF, FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

0.68

0.64

0.60

0.56

, DIODE CAPACITANCE (pF)

D

C

0.52
0

0.001

1.0 1.20.2 0.4 0.6 0.8

2.0 4.0 6.0 8.0
VR, REVERSE VOLTAGE (VOLTS)

0

10 20 30 40 50

Figure 4. Capacitance

TA = 25°C

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Leakage Current

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data