MOTOROLA MMBD6100LT1, MMBD6100LT3 Datasheet
MMBD6100LT1
Monolithic Dual
Switching Diode
MAXIMUM RATINGS (EACH DIODE)
Symbol Rating Value Unit
V
I
I
FM(surge)
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
R
q
P
R
q
TJ, T
(1) FR–5 = 1.0 0.75 0.062 in.
(2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Reverse Voltage 70 Vdc
R
Forward Current 200 mAdc
F
Peak Forward Surge Current 500 mAdc
Total Device Dissipation, FR–5 Board
D
JA
D
JA
stg
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient 556 °C/W
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient 417 °C/W
Junction and Storage
T emperature Range
(2)
TA = 25°C
(1)
225
1.8mWmW/°C
300
2.4mWmW/°C
–55 to
+150
°C
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PLASTIC
SOT–23S
CASE 318
DEVICE MARKING
3
CATHODE
3
2
5BM
ANODE
1
2
ANODE
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
ORDERING INFORMATION
Device Package Shipping
MMBD6100LT1 SOT–23S 3000/Tape & Reel
MMBD6100LT3 SOT–23S 10,000/Tape & Reel
1 Publication Order Number:
MMBD6100L T1/D
MMBD6100LT1
820
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
= 100 µAdc)
(I
(BR)
Reverse Voltage Leakage Current
(V
= 50 Vdc)
R
Forward Voltage
= 1.0 mAdc)
(I
F
(I
= 100 mAdc)
F
Reverse Recovery Time
(I
= IR = 10 mAdc, I
F
Capacitance
(V
= 0 V)
R
+10 V
Ω
2.0 k
100 µH
0.1 µF
= 1.0 mAdc) (Figure 1)
R(REC)
I
F
= 25°C unless otherwise noted) (EACH DIODE)
A
t
t
r
0.1 µF
p
10%
V
(BR)
I
R
V
F
t
rr
70 — Vdc
— 0.1 µAdc
0.55
0.8
0.7
1.1
— 4.0 ns
C — 2.5 pF
I
t
F
t
rr
Vdc
t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
V
R
90%
INPUT SIGNAL
I
R
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
= 1.0 mA
i
R(REC)
OUTPUT PULSE
(I
= IR = 10 mA; MEASURED
F
at i
= 1.0 mA)
R(REC)
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MMBD6100LT1
CURVES APPLICABLE TO EACH CATHODE
100
1.0
, FORWARD CURRENT (mA)
F
I
0.1
10
TA = 85°C
10
VF, FORWARD VOLTAGE (VOLTS)
TA = 25°C
TA = –40°C
1.0 1.20.2 0.4 0.6 0.8
m
, REVERSE CURRENT ( A)
R
I
1.0
0.1
0.01
0.001
0
10 20 30 40 50
Figure 2. Forward Voltage
1.0
0.9
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
, DIODE CAPACITANCE (pF)
D
C
0.8
0.7
0.6
0
2468
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
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