MOTOROLA MMBD6050LT1, MMBD6050LT3 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V

R

70 Vdc

Forward Current I

F

200 mAdc

Peak Forward Surge Current I

FM(surge)

500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

(1)

TA = 25°C
Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance, Junction to Ambient

R

q

JA

556 °C/W

Total Device Dissipation

Alumina Substrate,

(2)

TA = 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient

R

q

JA

417 °C/W

Junction and Storage Temperature TJ, T

stg

–55 to +150 °C

DEVICE MARKING

MMBD6050LT1 = 5A

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I

(BR)

= 100 µAdc) V

(BR)

70 — Vdc

Reverse Voltage Leakage Current

(VR = 50 Vdc)

I

R

— 0.1 µAdc

Forward Voltage

(IF = 1.0 mAdc)
(IF = 100 mAdc)

V

F

0.55

0.85

0.7

1.1

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, I

R(REC)

= 1.0 mAdc) (Figure 1)

t

rr

— 4.0 ns

Capacitance (VR = 0 V) C — 2.5 pF

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by MMBD6050LT1/D

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SEMICONDUCTOR TECHNICAL DATA

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1

2

3

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

 Motorola, Inc. 1997

3

CATHODE

1

ANODE

REV 1

MMBD6050LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I

R(peak)

is equal to 10 mA.

Notes: 3. tp » t

rr

+10 V

2.0 k

820

Ω

0.1 µF

DUT

V

R

100

µ

H

0.1

µ

F

50 Ω OUTPUT

PULSE

GENERATOR

50

Ω

INPUT

SAMPLING

OSCILLOSCOPE

t

r

t

p

t

10%

90%

I

F

I

R

t

rr

t

i

R(REC)

= 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at i

R(REC)

= 1.0 mA)

I

F

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

TYPICAL CHARACTERISTICS

Figure 2. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

1.0

10

100

0.1

Figure 3. Leakage Current

VR, REVERSE VOLTAGE (VOLTS)

10

0

I

1.0

0.1

0.001

0.01

10 20 30 40 50

I

1.0 1.20.2 0.4 0.6 0.8

Figure 4. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

0

C

0.68

0.64

0.60

0.52

0.56

2.0 4.0 6.0 8.0

, FORWARD CURRENT (mA)

F

TA = 85°C

TA = –40°C

TA = 25°C

, REVERSE CURRENT ( A)

R

m

, DIODE CAPACITANCE (pF)

D

TA = 25°C

TA = 55°C

TA = 85°C

TA = 150°C

TA = 125°C