![](/html/4e/4ee4/4ee476cf556f3b7e89937fbe187f9839242e5f72c9473e176982dc594e0d7a9f/bg1.png)
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
MMBD6050LT1 = 5A
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100 µAdc) V
(BR)
70 — Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
I
R
— 0.1 µAdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
V
F
0.55
0.85
0.7
1.1
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
t
rr
— 4.0 ns
Capacitance (VR = 0 V) C — 2.5 pF
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBD6050LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
Motorola, Inc. 1997
3
CATHODE
1
ANODE
REV 1
![](/html/4e/4ee4/4ee476cf556f3b7e89937fbe187f9839242e5f72c9473e176982dc594e0d7a9f/bg2.png)
MMBD6050LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. tp » t
rr
+10 V
2.0 k
820
Ω
0.1 µF
DUT
V
R
100
µ
H
0.1
µ
F
50 Ω OUTPUT
PULSE
GENERATOR
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
TA = 85°C
TA = –40°C
TA = 25°C
, REVERSE CURRENT ( A)
R
m
, DIODE CAPACITANCE (pF)
D
TA = 25°C
TA = 55°C
TA = 85°C
TA = 150°C
TA = 125°C