Motorola MMBD451LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MMBD451LT1/D
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 10 mAdc
MAXIMUM RATINGS
Peak Reverse Voltage V
Reverse Voltage V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction
T emperature Range
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Total Capacitance
(VR = 100 V, f = 1.0 MHz)
Reverse Current
(VR = 10 V)
Forward Voltage
(IF = 10 mAdc)
(IF = 100 mAdc)
(TJ = 125°C unless otherwise noted)
Rating
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
3
CATHODE
Symbol Value Unit
RM
R
P
F
T
J
stg
C
V
I
2
ANODE
T
R
F
Motorola Preferred Device
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
CASE 419–02, STYLE 2
20 Volts
10 Volts
200
1.6
–55 to +150
–55 to +150 °C
— 6.0 — pF
— 1.0 30 mAdc
—
—
0.28
0.45
DIODE
3
1
2
SOT–323 (SC–70)
mW
mW/°C
°C
Vdc
0.34
0.55
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MMBD451LT1
820
Ω
+10 V
0.1 µF
2 k
100
0.1
µ
I
F
µ
H
F
t
t
r
p
10%
t
I
F
t
rr
t
Ω
OUTPUT
50
PULSE
GENERATOR
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R(peak)
R
90%
INPUT SIGNAL
is equal to 10 mA.
I
R
Figure 1. Recovery Time Equivalent Test Circuit
i
= 1 mA
R(REC)
OUTPUT PULSE
(IF = IR = 10 mA; measured
at i
R(REC)
= 1 mA)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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