MOTOROLA MMBD352WT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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by MMBD352WT1/D

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These devices are designed primarily for UHF mixer applications but are suitable

also for use in detector and ultra–fast switching circuits.

• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage V

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation

Alumina Substrate

Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBD352WT1 = M5

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Forward Voltage

(IF = 10 mAdc)
Reverse Voltage Leakage Current

(VR = 3.0 V)

(VR = 7.0 V)
Capacitance

(VR = 0 V, f = 1.0 MHz)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

R

P

D

R

q

JA

P

D

R

q

JA

stg

7.0 V

200

1.6
625 °C/W
300

2.4
417 °C/W

–55 to +150 °C

mW

mW/°C

mW

mW/°C

CC



3

1

2

1

ANODE

CASE 419–02, STYLE 9

V

F

I

R

C — 1.0 pF

3

CATHODE/ANODE

MMBD352WT1

SOT–323 (SC–70)

— 0.60 V

—
—

0.25
10

2

CATHODE

m

A

Thermal Clad is a trademark of the Bergquist Company

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

MMBD352WT1

TYPICAL CHARACTERISTICS

100

10

1.0

, FORWARD CURRENT (mA)

F

I

0.1

TA = 85°C

TA = –40°C

TA = 25°C

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Forward Voltage

1.0

0.9

0.8

C, CAPACITANCE (pF)

0.7

0.7 0.80.3 0.4 0.5 0.6

0.6
0

1.0 2.0 3.0 4.0
VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Capacitance

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data