Motorola MLD2N06CL Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

  

SMARTDISCRETES



Internally Clamped, Current Limited
N–Channel Logic Level Power MOSFET

The MLD2N06CL is designed for applications that require a rugged power switching
device with short circuit protection that can be directly interfaced to a microcontrol unit
(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp
driver or other applications where a high in–rush current or a shorted load condition could
occur.

This logic level power MOSFET features current limiting for short circuit protection,
integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping
for over–voltage protection and Sensefet technology for low on–resistance. No additional
gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ
gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate–Source and Gate–Drain clamps allow the device to be applied
without use of external transient suppression components. The Gate–Source clamp
protects the MOSFET input from e lectrostatic v oltage s tress up t o 2.0 kV. The
Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs
with inductive loads. Their unique design provides voltage clamping that is essentially
independent of operating temperature.

The MLD2N06CL is fabricated using Motorola’s SMARTDISCRETES technology which
combines the advantages of a power MOSFET output device with the on–chip protective
circuitry that can be obtained from a standard MOSFET process. This approach offers an
economical means of providing protection to power MOSFETs from harsh automotive and
industrial environments. SMARTDISCRETES devices are specified over a wide tempera­ture range from –50°C to 150°C.

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

Clamped Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

Clamped Vdc

Gate–to–Source Voltage — Continuous V

GS

±10 Vdc

Drain Current — Continuous @ TC = 25°C I

D

Self–limited Adc

Total Power Dissipation @ TC = 25°C P

D

40 Watts
Electrostatic Voltage ESD 2.0 kV
Operating and Storage Temperature Range TJ, T

stg

–50 to 150 °C

THERMAL CHARACTERISTICS

Maximum Junction Temperature T

J(max)

150 °C

Thermal Resistance – Junction to Case R

θJC

3.12 °C/W

Maximum Lead Temperature for Soldering Purposes,

1/8″ from case for 5 sec.

T

L

260 °C

DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS

Single Pulse Drain–to–Source Avalanche Energy

(Starting TJ = 25°C, ID = 2.0 A, L = 40 mH)

E

AS

80 mJ

SMARTDISCRETES is a trademark of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MLD2N06CL/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MLD2N06CL

Motorola Preferred Device

VOLTAGE CLAMPED

CURRENT LIMITING

MOSFET

62 VOLTS (CLAMPED)

R

DS(on)

= 0.4 OHMS

CASE 369A–13, Style 2

DPAK Surface Mount

D

G

S

R1

R2

 Motorola, Inc. 1996

MLD2N06CL

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(ID = 20 mAdc, VGS = 0 Vdc)
(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)

V

(BR)DSS

58
58

62
62

66
66

Vdc

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 150°C)

I

DSS

—
—

0.6

6.0

5.0
20

µAdc

Gate–Source Leakage Current

(VG = 5.0 Vdc, VDS = 0 Vdc)
(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)

I

GSS

—
—

0.5

1.0

5.0
20

µAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(ID = 250 µAdc, VDS = VGS)
(ID = 250 µAdc, VDS = VGS, TJ = 150°C)

V

GS(th)

1.0

0.6

1.5
1

2.0

1.6

Vdc

Static Drain Current Limit

(VGS = 5.0 Vdc, VDS = 10 Vdc)
(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)

I

D(lim)

3.8

1.6

4.4

2.4

5.2

2.9

Adc

Static Drain–to–Source On–Resistance

(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)

R

DS(on)

—
—

0.3

0.53

0.4

0.7

Ohms

Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc) g

FS

1.0 1.4 — mhos

Static Source–to–Drain Diode Voltage

(IS = 1.0 Adc, VGS = 0 Vdc)

V

SD

— 1.1 1.5

Vdc

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

t

d(on)

— 1.0 1.5

µs

Rise Time

DD

= 30 Vdc, ID = 1.0 Adc,

t

r

— 3.0 5.0

Turn–Off Delay Time

(VDD = 30 Vdc, ID = 1.0 Adc,

V

GS(on)

= 5.0 Vdc, RGS = 25 Ohms)

t

d(off)

— 5.0 8.0

Fall Time t

f

— 3.0 5.0

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

I

D

, DRAIN CURRENT (AMPS)

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25

°C

VDS ≥ 7.5 V

TJ = 150

°C

25

°C

–55

°C

0 1 2 3 8

2.5

2.0

1.5

1.0

0.5
0

3.0

3.5

4.0

4 5 6 7

0 2 4 6 8

5

4

3

2

1

0

6.0 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V

(V

Figure 1. Output Characteristics Figure 2. Transfer Function