Motorola MJW16018, MJ16018 Datasheet
1
Motorola Bipolar Power Transistor Device Data
1.5 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. T hey a re particularly s uited f or
line–operated switchmode applications.
Typical Applications: Features:
• Switching Regulators • Collector–Emitter Voltage — V
CEV
= 1500 Vdc
• Inverters • Fast Turn–Off Times
• Solenoids 80 ns Inductive Fall Time — 100_C (Typ)
• Relay Drivers 110 ns Inductive Crossover Time — 100_C (Typ)
• Motor Controls 4.5 µs Inductive Storage Time — 100_C (Typ)
• Deflection Circuits • 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ16018
MJW16018
Unit
Collector–Emitter Voltage
V
CEO(sus)
800
Vdc
Collector–Emitter Voltage
V
CEV
1500
Vdc
Emitter–Base Voltage
V
EB
6
Vdc
Collector Current — Continuous
— Peak
(1)
I
C
I
CM
10
15
Adc
Base Current — Continuous
— Peak
(1)
I
B
I
BM
8
12
Adc
Total Power Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above TC = 25_C
P
D
175
100
1
125
50
1
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to 200
–55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1
1
_
C/W
Lead Temperature for Soldering
Purposes: 1/8″ from Case for
5 Seconds
T
L
275
_
C
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16018/D
Motorola, Inc. 1995
POWER TRANSISTORS
10 AMPERES
800 VOLTS
125 AND 175 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
MJ16018
CASE 340F–03
TO–247AE
MJW16018
REV 1
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Sustaining Voltage (Table 1) (IC = 50 mA, IB = 0)
V
CEO(sus)
800
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(V
CEV
= 1500 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CEV
= 1500 Vdc, V
BE(off)
= 1.5 Vdc, TC = 100_C)
I
CEV
—
—
—
—
0.25
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current (VCE = 1500 Vdc, RBE = 50 Ω, TC = 100_C)
I
CER
—
—
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
I
EBO
—
—
0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
S/b
See Figure 13
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 14
ON CHARACTERISTICS
(1)
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 5 Adc)
(IC = 5 Adc, IB = 2 Adc, TC = 100_C)
V
CE(sat)
—
—
—
—
—
—
1
5
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc)
Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc, TC = 100_C)
V
BE(sat)
—
—
—
—
1.5
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)
h
FE
4
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f
test
= 1 kHz)
C
ob
—
—
450
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS
Inductive Load (Table 1)
Storage Time
t
sv
—
4000
8000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
_
C)
t
fi
—
60
200
ÎÎÎ
ÎÎÎ
ÎÎÎ
Crossover Time
(IC = 5 Adc,
IB1 = 2 Adc,
J
= 25_C)
t
c
—
90
300
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
B1
= 2 Adc,
V
BE(off)
= 2 Vdc,
t
sv
—
4500
9000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
V
CE(pk)
= 400 Vdc)
PW = 25 µs
_
C)
t
fi
—
80
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
Crossover Time
PW = 25 µs
J
= 100_C)
t
c
—
110
375
ÎÎÎ
ÎÎÎ
ÎÎÎ
Resistive Load (Table 1)
Delay Time
t
d
—
85
200
ÎÎÎ
ÎÎÎ
ÎÎÎ
Rise Time
t
r
—
900
2000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
IB1 = 2 Adc, IB2 = 2 Adc,
RB2 = 3 Ω, PW = 25 µs,
t
s
—
4500
9000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
RB2 = 3 Ω, PW = 25 µs,
Duty Cycle v 2%)
t
f
—
200
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC = 1 A
100
0.2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1
0.5 3 10 15
10
7
Figure 2. Collector Saturation Region
0.07
IB, BASE CURRENT (AMPS)
1
0.2 0.7
7
3
2
70
h
FE
, DC CURRENT GAIN
3
VCE = 5 V
1 2 5 7
10
5
TC = 25°C
3 A
TC = 100°C
0°C
25°C
30
1 7
50
20
5
2
0.3 0.7 20.15 5 0.3 0.5 3
0.1
0.7
0.3
0.2
0.5
10 A
0.1
5 A 8 A
Baker Clamped
(TJ = 25
(TJ = 100
Baker Clamped
(IC = 5 Adc, VCC = 250 Vdc,
ns
ns
3
Motorola Bipolar Power Transistor Device Data
C, CAPACITANCE (pF)
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2 1
5
1
0.7
0.5
10
IC, COLLECTOR CURRENT (AMPS)
7
5
1
0.5
0.2
0.2
Figure 3. Collector–Emitter Saturation Region
50.50.1 0.2 0.3 1 103 7
Figure 4. Base–Emitter Saturation Region
Figure 5. Collector Cutoff Region
10
4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10
–1
0
0.1
IC/IB = 2.5
TC = 25
°
C
2 10
–0.4
Figure 6. Typical Capacitance
10K
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
TC = 25°C
C
ib
1
, COLLECTOR CURRENT ( A)
µ
I
C
0.3
TC = 25°C THRU 100°C
10
3
10
2
10
1
10
0
–0.2 +0.2 +0.4 +0.6
TJ = 150°C
125°C
100°C
75°C
REVERSE FORWARD
25°C
VCE = 250 V
1K
100
1
2 5 10 20 50 100 200 500 1K
IC/IB = 2.5
TC = 100
°
C
IC/IB = 5
TC = 25
°
C
IC/IB = 5
TC = 100
°
C
0.5 0.7 52
5
IC/IB = 2.5
0.1
0.05
0.07
3
2
10
3
2
0.7
0.3
0.3 0.7 3 7
C
ob
TYPICAL STATIC CHARACTERISTICS
t
fi
, FALL TIME (ns)
Figure 7. Storage Time Figure 8. Inductive Switching Fall Time
IC, COLLECTOR CURRENT (AMPS)
2 3 5 7 10
0.2
, STORAGE TIME ( s)t
sv
1
IC, COLLECTOR CURRENT (AMPS)
2 3 5 7 10
1000
500
200
70
30
10
1
V
BE(off)
= 2 V
TC = 100
°
C
700
300
100
50
20
NO BAKER CLAMP
BAKER CLAMPED
NO BAKER CLAMP
BAKER CLAMPED
V
BE(off)
= 2 V
TC = 100
°
C
IC/IB = 2.5
2.5
20
7
3
1
0.5
10
5
2
0.7
0.3
µ
5
5
IC/IB = 2.5
5
5
2.5
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
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