Motorola MJL16218 Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJL16218/D
SCANSWITCH
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very high resolution, full page, monochrome monitors.
• 1500 Volt Collector–Emitter Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Application Specific State–of–the–Art Die Design
• Fast Switching:
175 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage:
0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive
• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — V
• High Emitter–Base Breakdown Capability For High Voltage Of f Drive Circuits —
8.0 Volts (Min)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Breakdown V oltage V
Collector–Emitter Sustaining Voltage V
Emitter–Base Voltage V
Collector Current — Continuous
— Pulsed (1)
Base Current — Continuous
— Pulsed (1)
Maximum Repetitive Emitter–Base
Avalanche Energy
Total Power Dissipation @ TC = 25°C
@ TC = 100°C
Derated above TC = 25°C
Operating and Storage Temperature Range TJ, T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction to Case R
Lead Temperature for Soldering Purposes
1/8″ from the case for 5 seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
CES
W (BER) 0.2 mJ
CES
CEO(sus)
EBO
I
C
I
CM
I
B
I
BM
P
D
stg
θJC
T
L
MJL16218
*Motorola Preferred Device
POWER TRANSISTOR
15 AMPERES
1500 VOLTS — V
170 WATTS
CASE 340G–02, STYLE 2
TO–3PBL
1500 Vdc
650 Vdc
8.0 Vdc
15
20
7.0
14
170
39
1.49
– 55 to 125 °C
0.67 °C/W
275 °C
CES
Adc
Adc
Watts
W/°C
*
Designer’s and SCANSWITCH are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1997
Motorola Bipolar Power Transistor Device Data
1
MJL16218
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS (2)
Collector Cutoff Current (VCE = 1500 V, VBE = 0 V)
Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0) I
Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) V
Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) V
ON CHARACTERISTICS (2)
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 2.0 Adc)
Base–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc) V
DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 µH) t
Output Capacitance
(VCE = 10 Vdc, IE = 0, f
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 A, f
SWITCHING CHARACTERISTICS
Inductive Load (IC = 6.0 A, IB = 2.0 A), High Resolution Deflection
Simulator Circuit Table 2
Storage
Fall Time
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(VCE = 1200 V, VBE = 0 V)
(IC = 12 A, VCE = 5.0 Vdc)
= 100 kHz)
test
test
(TC = 25°C unless otherwise noted)
(IC = 3.0 Adc, IB = 0.6 Adc)
= 1.0 MHz)
Symbol Min Typ Max Unit
I
CES
EBO
(BR)EBO
CEO(sus)
V
CE(sat)
BE(sat)
h
FE
ds
C
ob
f
T
t
sv
t
fi
—
—
— — 25 µAdc
8.0 11 — Vdc
650 — — Vdc
—
—
— 0.9 1.5 Vdc
—
4.0
— 350 — ns
— 300 500 pF
— 0.8 — MHz
—
—
—
—
0.17
0.14
24
6.0
2000
175
250
25
1.0
0.5
—
—
3000
250
µAdc
Vdc
—
ns
, COLLECTOR CURRENT (A)
C
I
100
10
1.0
0.1
0.01
1.0
SAFE OPERATING AREA
10 ms
100 ms
250 ms
10010
VCE, COLLECTOR–EMITTER VOL TAGE (V)
Figure 1. Maximum Forward Bias
Safe Operating Area
50 ms
18
IC/IB = 5
TJ
≤
14
10
6
, COLLECTOR CURRENT (A)
C
I
2
1000 300 1500
0
600 1200
VCE, COLLECTOR–EMITTER VOL TAGE (V)
900
100°C
Figure 2. Maximum Reverse Bias
Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA (continued)
MJL16218
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TC = 25_C; T
J(pk)
is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 1 may be found at any case
temperature by using the appropriate curve on Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc.
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
45 85 125
65
TC, CASE TEMPERATURE (
105
°
C)
POWER DERATING F ACT OR
0.4
0.2
0
25
Figure 3. Power Derating
The safe level for these devices is specified as Reverse
Biased Safe Operating Area and represents the voltage–
current condition allowable during reverse biased turnoff.
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 2
gives the RBSOA characteristics.
L
coil(ICpk
T1[
T1 adjusted to obtain I
)
V
CC
V
(BR)CEO
L = 10 mH
RB2 = ∞
VCC = 20 Volts
*Tektronix
*P–6042 or
*Equivalent
C(pk)
Table 1. RBSOA/V
0
≈
–35 V
T
1
0 V
A
*I
50
B
H.P. 214
OR EQUIV.
P.G.
50
+V
–V
T.U.T.
(BR)CEO(SUS)
+
–
500
*I
C
MR856
V
clamp
RBSOA
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired I
Note: Adjust –V to obtain desired V
0.02
µ
10
0.02
L
µ
F
20
F
µ
F
+–
µ
F
1
T est Circuit
100
R
R
100
V
CC
B1
B2
+V
2N6191
2N5337
–V
I
C
V
CE
I
B
B1
≈
11 V
A
V
CE(pk)
BE(off)
I
C(pk)
I
B1
I
B2
at Point A.
Motorola Bipolar Power Transistor Device Data
3
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